Abstract:
PROBLEM TO BE SOLVED: To obtain a resist composition, having responsiveness to imaging irradiation and enhanced resistance to reactive ion etching by incorporating a radiation sensitive polymer and an organometallic compound of a specified metal. SOLUTION: This resist composition contains a radiation responsive polymer and an organometallic compound of a metal selected from among the group comprising yttrium, aluminum, iron, titanium, zirconium, hafnium and a mixture of these. The organometallic compound is, e.g. yttrium trishexafluoroacetylacetonate or yttrium tris(2,2,6,6-tetramethyl)-3,5-heptanedioate and the amount of the organometallic compound used is about 0.1-25 wt.% of the weight of the radiation sensitive polymer. The organometallic compound may be used in combination with various resist polymers including a chemically amplified resist and a non-chemically amplified resist.
Abstract:
PROBLEM TO BE SOLVED: To provide a phase metrology pattern for an attenuating phase mask. SOLUTION: The phase error of this pattern can be determined to high accuracy by aerial image measurements. This pattern can be used to create an optical phase standard for calibrating phase metrology equipment for attenuated phase masks or as a witness pattern on a product mask, to verify the phase accuracy of that mask. The pattern includes an effective line to space ratio and can be tested, by using a microscope or a stepper system, or can be measured directly using a detector for the zeroth-order diffraction measurement. COPYRIGHT: (C)2007,JPO&INPIT