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    HIGH SENSITIVITY RESIST COMPOSITIONS FOR ELECTRON-BASED LITHOGRAPHY
    1.
    发明公开
    HIGH SENSITIVITY RESIST COMPOSITIONS FOR ELECTRON-BASED LITHOGRAPHY 有权
    E E E EN E E E E E E E E E E E

    公开(公告)号：EP1586005A4

    公开(公告)日：2009-05-13

    申请号：EP02786917

    申请日：2002-12-05

    Applicant: IBM

    Inventor： HUANG WU-SONG ,  LI WENJIE ,  MOREAU WAYNE ,  MEDEIROS DAVID E ,  PETRILLO KAREN E ,  LANG ROTBERT N ,  ANGELOPOULOS MARIE

    IPC: G03F7/004 ,  G03F7/039 ,  G03F7/30

    CPC classification number: G03F7/0045 ,  G03F7/0392

    Abstract: The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.

    Chemical amplification resist suitable for electron beam lithography and chemical amplification resist system
    3.
    发明专利
    Chemical amplification resist suitable for electron beam lithography and chemical amplification resist system 有权
    化学放大电阻适用于电子束光刻和化学放大电阻系统

    公开(公告)号：JPH11282166A

    公开(公告)日：1999-10-15

    申请号：JP1270699

    申请日：1999-01-21

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレイション

    Inventor： BUCCHIGNANO JAMES J ,  HUANG WU-SONG ,  KATNANI AHMAD D ,  LEE KIM Y ,  MOREAU WAYNE M ,  PETRILLO KAREN E

    IPC: H01L21/027 ,  G03F7/004 ,  G03F7/039

    CPC classification number: G03F7/039 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/11 ,  Y10S430/111 ,  Y10S430/143

    Abstract: PROBLEM TO BE SOLVED: To provide a chemical amplification resist exhibiting improved preservability of a resist coating and almost or completely free from the effect of vacuum in use by incorporating an aq. base-soluble polymer or copolymer having polar functional groups, a part of which is protected with specified cycloaliphatic ketal substituents.
    SOLUTION: The chemical amplification resist contains an aq. base-soluble polymer or copolymer having polar functional groups, some of which are protected with cycloaliphatic ketal substituents represented by the formula RO-X-as acid decomposable protective groups, an acid generating agent, a solvent for the base-soluble polymer or copolymer, a base and, optionally, a surfactant. In the formula, X is an about 3-12C optionally substd. cycloaliphatic functional group and R is about 1-12C linear or branched alkyl or the like.
    COPYRIGHT: (C)1999,JPO

    Abstract translation: 要解决的问题：提供具有改进的抗蚀剂涂层保存性的化学放大抗蚀剂，几乎或完全没有真空在使用中的作用， 具有极性官能团的碱溶性聚合物或共聚物，其一部分用特定的脂环族缩酮取代基保护。 解决方案：化学增幅抗蚀剂含有水溶液。 具有极性官能团的碱溶性聚合物或共聚物，其中一些由式RO-X代表的脂环族缩酮取代基保护，作为酸可分解的保护基团，酸产生剂，用于碱溶性聚合物或共聚物的溶剂， 碱和任选的表面活性剂。 在该式中，X是约3-12C任选取代的。 脂环族官能团，R为约1-12个直链或支链烷基等。

    RESIST COMPOSITION AND USE THEREOF
    4.
    发明专利
    RESIST COMPOSITION AND USE THEREOF 失效

    公开(公告)号：JP2001066767A

    公开(公告)日：2001-03-16

    申请号：JP2000209547

    申请日：2000-07-11

    Applicant: IBM

    Inventor： ANGELOPOULOS MARIE ,  ARI AVIRAMU ,  EDWARD D BAABICHI ,  TIMOTHY ARAN BRANNER ,  THOMAS BENJAMIN FAURE ,  C RICHARD GUARNIERI ,  KWONG RANEE W ,  PETRILLO KAREN E

    IPC: G03F1/08 ,  G03F7/004 ,  G03F7/039 ,  G03F7/09 ,  G03F7/40 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To obtain a resist composition, having responsiveness to imaging irradiation and enhanced resistance to reactive ion etching by incorporating a radiation sensitive polymer and an organometallic compound of a specified metal. SOLUTION: This resist composition contains a radiation responsive polymer and an organometallic compound of a metal selected from among the group comprising yttrium, aluminum, iron, titanium, zirconium, hafnium and a mixture of these. The organometallic compound is, e.g. yttrium trishexafluoroacetylacetonate or yttrium tris(2,2,6,6-tetramethyl)-3,5-heptanedioate and the amount of the organometallic compound used is about 0.1-25 wt.% of the weight of the radiation sensitive polymer. The organometallic compound may be used in combination with various resist polymers including a chemically amplified resist and a non-chemically amplified resist.

    HIGH SENSITIVITY RESIST COMPOSITIONS FOR ELECTRON-BASED LITHOGRAPHY
    6.
    发明申请
    HIGH SENSITIVITY RESIST COMPOSITIONS FOR ELECTRON-BASED LITHOGRAPHY 审中-公开
    用于电子光刻的高灵敏度组合物

    公开(公告)号：WO2004053594A3

    公开(公告)日：2005-11-24

    申请号：PCT/US0239048

    申请日：2002-12-05

    Applicant: IBM ,  HUANG WU-SONG ,  LI WENJIE ,  MOREAU WAYNE ,  MEDEIROS DAVID R ,  PETRILLO KAREN E ,  LANG ROTBERT N ,  ANGELOPOULOS MARIE

    Inventor： HUANG WU-SONG ,  LI WENJIE ,  MOREAU WAYNE ,  MEDEIROS DAVID R ,  PETRILLO KAREN E ,  LANG ROTBERT N ,  ANGELOPOULOS MARIE

    IPC: G03F7/004 ,  G03F7/039 ,  G03F7/30

    CPC classification number: G03F7/0045 ,  G03F7/0392

    Abstract: The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.

    Abstract translation: 具有酸敏感成像聚合物和辐射敏感性酸产生剂组分的抗蚀剂组合物包含：（i）选自溶解抑制酸产生剂的第一辐射敏感性酸产生剂，和（ii）选择的第二辐射敏感酸产生剂 由不受保护的酸性官能化酸产生剂和酸不稳定基团保护的酸性官能化辐射敏感酸发生剂组成的组; 能够形成适用于EPL，EUV，软X射线和其他低能量光刻成像应用的高灵敏度抗蚀剂。 抗蚀剂组合物也可用于其它平版印刷工艺。

    High sensitivity resist composition for electron-based lithography
    7.
    发明专利
    High sensitivity resist composition for electron-based lithography 有权
    用于电子光刻的高灵敏度组合物

    公开(公告)号：JP2007219545A

    公开(公告)日：2007-08-30

    申请号：JP2007116438

    申请日：2007-04-26

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

    Inventor： HUANG WU-SONG ,  LI WENJIE ,  MOREAU WAYNE ,  MEDEIROS DAVID E ,  PETRILLO KAREN E ,  LANG ROBERT N ,  ANGELOPOULOS MARIE

    IPC: G03F7/039 ,  G03F7/004 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To provide a resist composition comprising an acid-sensitive imaging polymer and a radiation-sensitive acid generator component.
    SOLUTION: The resist composition contains (i) a first radiation-sensitive acid generator selected from the group consisting of dissolution inhibiting acid generators and (ii) a second radiation-sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group protected acidic group-functionalized radiation-sensitive acid generators, and enables formation of a highly sensitive resist suitable for use in EPL or EUV, soft X-ray and another low energy intensity lithographic imaging applications. The resist composition is useful in other lithography processes as well.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供包含酸敏感成像聚合物和辐射敏感酸产生剂组分的抗蚀剂组合物。 抗蚀剂组合物包含（i）选自溶解抑制酸发生剂的第一辐射敏感性酸产生剂和（ii）选自下组的第二辐射敏感性酸产生剂：未保护的酸性基团 - 官能化酸产生剂和酸不稳定基团保护的酸性官能化辐射敏感酸发生剂，并且能够形成适用于EPL或EUV，软X射线和另一种低能量光刻成像应用的高灵敏度抗蚀剂。 抗蚀剂组合物也用于其它光刻工艺。 版权所有（C）2007，JPO＆INPIT

    Method for forming image in resist, topcoat layer material (immersion lithography contamination gettering layer)
    8.
    发明专利
    Method for forming image in resist, topcoat layer material (immersion lithography contamination gettering layer) 有权
    用于形成耐蚀图像的方法，顶层材料（渗透层析污染捕获层）

    公开(公告)号：JP2006338002A

    公开(公告)日：2006-12-14

    申请号：JP2006142379

    申请日：2006-05-23

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

    Inventor： CORLISS DANIEL A ,  GIL DARIO ,  GOLDFARB DARIO L ,  HOLMES STEVEN J ,  HORAK DAVID VACLAV ,  KIMMEL KURT R ,  PETRILLO KAREN E ,  SHNEYDER DMITRIY I

    IPC: G03F7/11 ,  H01L21/027

    CPC classification number: G03F7/2041 ,  G03F7/11 ,  Y10S430/162

    Abstract: PROBLEM TO BE SOLVED: To prevent interaction between a photoresist layer and an immersion fluid in a immersion lithography system and to prevent contaminants in the immersion fluid from contaminating an integrated circuit being fabricated.
    SOLUTION: The method for forming an image in a photoresist layer includes: a step of providing a substrate; a step (S12) of forming a photoresist layer over the substrate; a step (S16) of forming a contamination gettering topcoat layer over the photoresist layer, the contamination gettering topcoat layer including contains one or more polymers and one or more cation complexing agents; a step of exposing the photoresist layer to actinic radiation; and a step of removing an exposed region of the photoresist layer or an unexposed region of the photoresist layer. The contamination gettering topcoat layer includes one or more polymers, one or more cation complexing agents, and a casting solvent.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：为了防止浸没式光刻系统中的光致抗蚀剂层和浸没流体之间的相互作用并且防止浸没流体中的污染物污染正在制造的集成电路。 解决方案：在光致抗蚀剂层中形成图像的方法包括：提供基板的步骤; 在衬底上形成光致抗蚀剂层的步骤（S12）; 在光致抗蚀剂层上形成污染吸气外涂层的步骤（S16），包含吸污顶层的污染物包含一种或多种聚合物和一种或多种阳离子络合剂; 将光致抗蚀剂层暴露于光化辐射的步骤; 以及除去光致抗蚀剂层的曝光区域或光致抗蚀剂层的未曝光区域的步骤。 污染吸附顶涂层包括一种或多种聚合物，一种或多种阳离子络合剂和流延溶剂。 版权所有（C）2007，JPO＆INPIT

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