公开(公告)号：DE3381459D1

公开(公告)日：1990-05-17

申请号：DE3381459

申请日：1983-05-02

Applicant: IBM

Inventor： EPHRATH LINDA MERO ,  SILVESTRI VICTOR JOSEPH ,  TANG DENNY DUAN-LEE

IPC: H01L21/76 ,  H01L21/20 ,  H01L21/74 ,  H01L21/763 ,  H01L21/205

公开(公告)号：DE3786851T2

公开(公告)日：1994-03-17

申请号：DE3786851

申请日：1987-05-05

Applicant: IBM

Inventor： BENNETT REID STUART ,  EPHRATH LINDA MERO ,  SCHWARTZ GERALDINE COGIN ,  SELWYN GARY STEWART

IPC: H01L21/302 ,  C23F1/00 ,  G01N21/64 ,  H01J37/32 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  C23F4/00

Abstract: Laser induced fluorescence is utilized to detect the reactive ion etch-through of a given layer in a wafer by detecting a large change in the concentration of a wafer selected minor species from the wafer in the etching plasma. This selected minor species must be present in a significantly different concentration in the etched given layer compared to any of the other layers in the wafer in order to provide a proper endpoint detection. In one embodiment, when the large change in the selected minor species concentration is detected, then the RF electrodes for the reactor are de-energized.

公开(公告)号：DE3274507D1

公开(公告)日：1987-01-15

申请号：DE3274507

申请日：1982-04-27

Applicant: IBM

Inventor： EPHRATH LINDA MERO

IPC: C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065

Abstract: Reactive Ion Etching (RIE) apparatus which provides for uniform etching of substrates (9) regardless of their position on a cathode (4) utilizes a perforated anode (10). These perforations (11) are interlaced, intersected or partially blocked with various configurations of conductive elements (12). Concentric circle, starburst, spiral arm and spiral configurations may be interlaced with the perforations in the anode to obtain uniform etching of substrates regardless of their radial position on the cathode. With all these configurations, the common factor is that the interlaced configurations intersect more perforations near the center of the anode or catcher plate than are intersected at greater radial distances.

公开(公告)号：DE3786851D1

公开(公告)日：1993-09-09

申请号：DE3786851

申请日：1987-05-05

Applicant: IBM

Inventor： BENNETT REID STUART ,  EPHRATH LINDA MERO ,  SCHWARTZ GERALDINE COGIN ,  SELWYN GARY STEWART

IPC: H01L21/302 ,  C23F1/00 ,  G01N21/64 ,  H01J37/32 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  C23F4/00

Abstract: Laser induced fluorescence is utilized to detect the reactive ion etch-through of a given layer in a wafer by detecting a large change in the concentration of a wafer selected minor species from the wafer in the etching plasma. This selected minor species must be present in a significantly different concentration in the etched given layer compared to any of the other layers in the wafer in order to provide a proper endpoint detection. In one embodiment, when the large change in the selected minor species concentration is detected, then the RF electrodes for the reactor are de-energized.

公开(公告)号：DE2962742D1

公开(公告)日：1982-06-24

申请号：DE2962742

申请日：1979-12-04

Applicant: IBM

Inventor： BASSOUS ERNEST ,  EPHRATH LINDA MERO

IPC: C23F4/00 ,  G03F1/20 ,  H01L21/302 ,  H01L21/3065 ,  C23F1/02 ,  B23P1/00 ,  C23C15/00