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1.发明公开METHOD FOR FORMING A ONE MASK HYPERABRUPT JUNCTION VARACTOR USING A COMPENSATED CATHODE CONTACT 有权法形成EINMASKEN-超突变-ÜBERGANGSVARAKTOR与补偿的阴极接触的
公开(公告)号：EP1839340A4
公开(公告)日：2009-09-09
申请号：EP05855611
申请日：2005-12-22
Applicant: IBM
Inventor： COOLBAUGH DOUGLAS D , FURKAY STEPHEN S , JOHNSON JEFFREY B , RASSEL ROBERT M
CPC classification number: H01L29/93
Abstract: A semiconductor structure comprising a hyperabrupt junction varactor with a compensated cathode contact as well as a method of fabricating the same are disclosed. The method includes a single implant mask which is used in forming the subcollector/cathode, collector/well and hyperabrupt junction.
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2.发明申请METHOD FOR FORMING A ONE MASK HYPERABRUPT JUNCTION VARACTOR USING A COMPENSATED CATHODE CONTACT 审中-公开使用补偿阴极接触形成一个掩模超高压连接器的方法
公开(公告)号：WO2006073943A2
公开(公告)日：2006-07-13
申请号：PCT/US2005047085
申请日：2005-12-22
Applicant: IBM , COOLBAUGH DOUGLAS D , FURKAY STEPHEN S , JOHNSON JEFFREY B , RASSEL ROBERT M
Inventor： COOLBAUGH DOUGLAS D , FURKAY STEPHEN S , JOHNSON JEFFREY B , RASSEL ROBERT M
CPC classification number: H01L29/93
Abstract: A semiconductor structure comprising a hyperabrupt junction varactor with a compensated cathode contact as well as a method of fabricating the same are disclosed. The method includes a single implant mask which is used in forming the subcollector/cathode, collector/well and hyperabrupt junction.
Abstract translation: 公开了一种半导体结构，其包括具有补偿的阴极接触的超级连接变容二极管及其制造方法。 该方法包括用于形成子集电极/阴极，集电极/阱和超破裂结的单个注入掩模。
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