公开(公告)号：US3925107A

公开(公告)日：1975-12-09

申请号：US52279474

申请日：1974-11-11

Applicant: IBM

Inventor： GDULA ROBERT A ,  RAIDER STANLEY I ,  REVITZ MARTIN

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L29/00 ,  H01L21/324

CPC classification number: H01L21/28 ,  H01L29/00 ,  Y10S438/91

Abstract: The fixed charge in an SiO2 dielectric layer for an MOS device is reduced by annealing the device after the SiO2 gate dielectric layer has been formed by thermal oxidation to a thickness less than 500 Angstroms wherein the annealing is accomplished in an argon or other Group VIII gas atmosphere at a temperature of at least 900*C for at least ten minutes.

公开(公告)号：CA1222218A

公开(公告)日：1987-05-26

申请号：CA506439

申请日：1986-04-11

Applicant: IBM

Inventor： BIANCHI JACQUELINE K ,  GDULA ROBERT A ,  LANGE DENNIS J

IPC: C04B41/53 ,  C04B41/91 ,  H01L21/311

Abstract: REACTIVE ION ETCHING PROCESS In a process for etching by reactive ion etching, a ceramic partially masked by an organic photoresist, an etch gas containing SF6, a noble gas and a small percentage of a carbon-containing gas is used.

公开(公告)号：CA974681A

公开(公告)日：1975-09-16

申请号：CA148259

申请日：1972-07-31

Applicant: IBM

Inventor： GDULA ROBERT A

IPC: C04B35/622 ,  C04B33/00 ,  C04B35/00 ,  C04B35/10 ,  H01B3/00 ,  H01B3/02 ,  H05K1/03 ,  H05K3/00