NEGATIVE CONTRAST PHOTORESIST DEVELOPABLE BY BASE

    公开(公告)号:JPH03152543A

    公开(公告)日:1991-06-28

    申请号:JP25042190

    申请日:1990-09-21

    Applicant: IBM

    Abstract: PURPOSE: To ensure satisfactory contrast and sensitivity by using an arom. hydroxy substd. polymer, a radiation-degradable acid generating agent and a crosslinking agent having two epoxy groups per one molecule. CONSTITUTION: This photoresist contains polyhydroxystyrene, especially poly-p- hydroxystyrene or novolak such as m-cresol novolak or bisphenol A novolak as an arom. hydroxy substd. polymer, a metallic or nonmetallic onium salt or a nonmetallic precursor of sulfonic acid generating the strong acid when exposed with radiation as a radiation-degradable acid generating agent and an epoxide-contg. compd. having two epoxy groups and crosslinking the hydroxy substd. polymer in the presence of the acid generated under radiation. Satisfactory contrast is ensured without reducing sensitivity.

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