公开(公告)号：US6410962B2

公开(公告)日：2002-06-25

申请号：US82930801

申请日：2001-04-09

Applicant: IBM

Inventor： GEISSLER STEPHEN FRANK ,  VOLDMAN STEVEN HOWARD

IPC: H01L21/84 ,  H01L23/60 ,  H01L27/02 ,  H01L23/62

CPC classification number: H01L23/60 ,  H01L21/84 ,  H01L24/49 ,  H01L27/0248 ,  H01L2224/49109 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/13034 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A method of dissipating charge from a substrate of an SOI device is provided wherein a charge dissipation path is formed in the device so that it abuts the various layers thereof. Exemplary charge dissipation paths include high conductive materials, resistive means, and field emission or arc discharge means. SOI structures having said charge dissipation path formed therein are also provided. SOI ESD circuits between SOI substrate and chip ground Vss are provided herein.

Abstract translation: 提供了从SOI器件的衬底中耗散电荷的方法，其中在器件中形成电荷耗散路径，使得其邻接其各个层。 示例性电荷耗散路径包括高导电材料，电阻装置，场发射或电弧放电装置。 还提供了其中形成有所述电荷耗散路径的SOI结构。 本文提供SOI衬底和芯片接地Vss之间的SOI ESD电路。

公开(公告)号：DE69425527T2

公开(公告)日：2001-04-26

申请号：DE69425527

申请日：1994-03-23

Applicant: IBM

Inventor： GEISSLER STEPHEN FRANK ,  KOREJWA JOSEF WARREN ,  LASKY JEROME BRETT ,  PAI PAI-HUNG

IPC: H01L21/318 ,  H01L21/314 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L21/28

Abstract: A silicon nitride layer in a semiconductor device is oxidized by exposure to a mixture of an oxygen reactant and a dilute amount of a fluorine-containing compound at a temperature sufficiently high to substantially cause the oxidation of the silicon nitride. Generally, a temperature greater than about 600 DEG C is sufficient to cause such oxidation, although some oxidation may occur at lower temperatures. The concentration of the fluorine-containing compound is also not critical, but is generally between about 100 to 1500 ppm by volume relative to the total mixture volume. Preferably, NF3 is the fluorine-containing compound, and a temperature greater than about 700 DEG C at a concentration of between about 100 to 1000 ppm is used.

公开(公告)号：DE69425527D1

公开(公告)日：2000-09-21

申请号：DE69425527

申请日：1994-03-23

Applicant: IBM

Inventor： GEISSLER STEPHEN FRANK ,  KOREJWA JOSEF WARREN ,  LASKY JEROME BRETT ,  PAI PAI-HUNG

IPC: H01L21/318 ,  H01L21/314 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L21/28

Abstract: A silicon nitride layer in a semiconductor device is oxidized by exposure to a mixture of an oxygen reactant and a dilute amount of a fluorine-containing compound at a temperature sufficiently high to substantially cause the oxidation of the silicon nitride. Generally, a temperature greater than about 600 DEG C is sufficient to cause such oxidation, although some oxidation may occur at lower temperatures. The concentration of the fluorine-containing compound is also not critical, but is generally between about 100 to 1500 ppm by volume relative to the total mixture volume. Preferably, NF3 is the fluorine-containing compound, and a temperature greater than about 700 DEG C at a concentration of between about 100 to 1000 ppm is used.