公开(公告)号：DE69425527D1

公开(公告)日：2000-09-21

申请号：DE69425527

申请日：1994-03-23

Applicant: IBM

Inventor： GEISSLER STEPHEN FRANK ,  KOREJWA JOSEF WARREN ,  LASKY JEROME BRETT ,  PAI PAI-HUNG

IPC: H01L21/318 ,  H01L21/314 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L21/28

Abstract: A silicon nitride layer in a semiconductor device is oxidized by exposure to a mixture of an oxygen reactant and a dilute amount of a fluorine-containing compound at a temperature sufficiently high to substantially cause the oxidation of the silicon nitride. Generally, a temperature greater than about 600 DEG C is sufficient to cause such oxidation, although some oxidation may occur at lower temperatures. The concentration of the fluorine-containing compound is also not critical, but is generally between about 100 to 1500 ppm by volume relative to the total mixture volume. Preferably, NF3 is the fluorine-containing compound, and a temperature greater than about 700 DEG C at a concentration of between about 100 to 1000 ppm is used.

公开(公告)号：MY121455A

公开(公告)日：2006-01-28

申请号：MYPI20005562

申请日：2000-11-28

Applicant: IBM

Inventor： WALTON ERICK GREGORY ,  UZOH CYPRIAN EMEKA ,  CHUNG DEAN S ,  COLLINS LARA SANDRA ,  CORBIN WILLIAM E ,  DELIGIANNI HARIKLIA ,  EDELSTEIN DANIEL CHARLES ,  FLUEGEL JAMES E ,  KOREJWA JOSEF WARREN ,  LOCKE PETER S

IPC: C25D5/22 ,  C25D5/06 ,  C25D17/00 ,  C25D17/14

Abstract: AA METAL PLATING APPARATUS IS DESCRIBED WHICH INCLUDES A COMPRESSIBLE MEMBER HAVING A CONDUCTIVE SURFACE COVERING SUBSTANTIALLY ALL OF THE SURFACE OF THE SUBSTRATE TO BE PLATED. THE PLATING CURRENT IS THEREBY TRANSMITTED OVER A WIDE AREA OF THE SUBSTRATE, RATHER THAN A FEW LOCALIZED CONTACT POINTS. THE COMPRESSIBLE MEMBER IS POROUS SO AS TO ABSORB THE PLATING SOLUTION AND TRANSMIT THE PLATING SOLUTION TO THE SUBSTRATE. THE WAFER AND COMPRESSIBLE MEMBER MAY ROTATE WITH RESPECT TO EACH OTHER. THE COMPRESSIBLE MEMBER MAY BE AT CATHODE POTENTIAL OR MAY BE A PASSIVE CIRCUIT ELEMENT.

公开(公告)号：DE69425527T2

公开(公告)日：2001-04-26

申请号：DE69425527

申请日：1994-03-23

Applicant: IBM

Inventor： GEISSLER STEPHEN FRANK ,  KOREJWA JOSEF WARREN ,  LASKY JEROME BRETT ,  PAI PAI-HUNG

IPC: H01L21/318 ,  H01L21/314 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L21/28

Abstract: A silicon nitride layer in a semiconductor device is oxidized by exposure to a mixture of an oxygen reactant and a dilute amount of a fluorine-containing compound at a temperature sufficiently high to substantially cause the oxidation of the silicon nitride. Generally, a temperature greater than about 600 DEG C is sufficient to cause such oxidation, although some oxidation may occur at lower temperatures. The concentration of the fluorine-containing compound is also not critical, but is generally between about 100 to 1500 ppm by volume relative to the total mixture volume. Preferably, NF3 is the fluorine-containing compound, and a temperature greater than about 700 DEG C at a concentration of between about 100 to 1000 ppm is used.