公开(公告)号：DE69425527T2

公开(公告)日：2001-04-26

申请号：DE69425527

申请日：1994-03-23

Applicant: IBM

Inventor： GEISSLER STEPHEN FRANK ,  KOREJWA JOSEF WARREN ,  LASKY JEROME BRETT ,  PAI PAI-HUNG

IPC: H01L21/318 ,  H01L21/314 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L21/28

Abstract: A silicon nitride layer in a semiconductor device is oxidized by exposure to a mixture of an oxygen reactant and a dilute amount of a fluorine-containing compound at a temperature sufficiently high to substantially cause the oxidation of the silicon nitride. Generally, a temperature greater than about 600 DEG C is sufficient to cause such oxidation, although some oxidation may occur at lower temperatures. The concentration of the fluorine-containing compound is also not critical, but is generally between about 100 to 1500 ppm by volume relative to the total mixture volume. Preferably, NF3 is the fluorine-containing compound, and a temperature greater than about 700 DEG C at a concentration of between about 100 to 1000 ppm is used.

公开(公告)号：DE69425527D1

公开(公告)日：2000-09-21

申请号：DE69425527

申请日：1994-03-23

Applicant: IBM

Inventor： GEISSLER STEPHEN FRANK ,  KOREJWA JOSEF WARREN ,  LASKY JEROME BRETT ,  PAI PAI-HUNG

IPC: H01L21/318 ,  H01L21/314 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L21/28

Abstract: A silicon nitride layer in a semiconductor device is oxidized by exposure to a mixture of an oxygen reactant and a dilute amount of a fluorine-containing compound at a temperature sufficiently high to substantially cause the oxidation of the silicon nitride. Generally, a temperature greater than about 600 DEG C is sufficient to cause such oxidation, although some oxidation may occur at lower temperatures. The concentration of the fluorine-containing compound is also not critical, but is generally between about 100 to 1500 ppm by volume relative to the total mixture volume. Preferably, NF3 is the fluorine-containing compound, and a temperature greater than about 700 DEG C at a concentration of between about 100 to 1000 ppm is used.