公开(公告)号：EP0814497A2

公开(公告)日：1997-12-29

申请号：EP97304224

申请日：1997-06-17

Applicant: SIEMENS AG ,  TOSHIBA KK ,  IBM

Inventor： ALSMEIER JOHANN ,  COTE DONNA R ,  LOH STEPHEN K ,  PARRIES PAUL C ,  GIFFORD GEORGE G ,  PREIN FRANK ,  LEVY MAX G ,  SUGIURA SOICHI

IPC: C23C16/30 ,  C23C16/56 ,  H01L21/205 ,  H01L21/28 ,  H01L21/30 ,  H01L21/31 ,  H01L21/318 ,  H01L21/336 ,  H01L23/31 ,  H01L29/78 ,  H01L21/22

CPC classification number: H01L29/66575 ,  H01L21/28176 ,  H01L21/3003 ,  H01L21/3185 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/00

Abstract: A process for fabricating a device including the step of forming a structure for facilitating the passivation of surface states is disclosed. The structure comprises a hydrogen-rich (H-R) silicon nitride layer formed as part of the device structure. The H-R layer, which is formed by plasma-enhanced chemical vapor deposition, comprises hydrogen in an amount greater than that of conventional PLCVD nitride layers.

Abstract translation: 公开了一种用于制造包括形成用于促进表面状态钝化的结构的步骤的装置的方法。 该结构包括作为器件结构的一部分形成的富氢（H-R）氮化硅层。 通过等离子体增强化学气相沉积形成的H-R层包含比常规PLCVD氮化物层大的量的氢。

公开(公告)号：JPH11135454A

公开(公告)日：1999-05-21

申请号：JP23405098

申请日：1998-08-20

Applicant: IBM ,  SIEMENS AG

Inventor： AJMERA ATUL C ,  DEHM CHRISTINE ,  DOMENICUCCI ANTHONY G ,  GIFFORD GEORGE G ,  LOH STEPHEN K ,  PARKS CHRISTOPHER ,  SARDESAI VIRAJI Y

IPC: H01L21/28 ,  H01L29/49

Abstract: PROBLEM TO BE SOLVED: To provide an improved method for forming a metallic silicide conductor in an integrated circuit. SOLUTION: A porous barrier is formed to prevent the thermal movement of silicon by enriching the grain boundary of a polysilicon layer 25 with nitrogen without forming an individual barrier layer. A reduction in the movement of the silicon prevents the agglomeration of the silicon in a metallic silicide layer formed on a policide gate/interconnection structure. The aggromelation of the silicon is a precedent advance phenomenon of a polycide inversion and hence effectively eliminates the polycide inversion passing through a lower oxide and damaging a device.

公开(公告)号：BR9005281A

公开(公告)日：1991-09-17

申请号：BR9005281

申请日：1990-10-19

Applicant: IBM

Inventor： BENNETT REID S ,  ELLINGBOE ALBERT R ,  GIFFORD GEORGE G ,  HALER KURT L ,  MCKILLOP JOHN S ,  SELWYN GARY S ,  SINGH JYOTHI

IPC: C23F4/00 ,  C23C16/44 ,  C23C16/515 ,  H01J37/32 ,  H01L21/302 ,  H05H1/24

公开(公告)号：CA2024637A1

公开(公告)日：1991-04-24

申请号：CA2024637

申请日：1990-09-05

Applicant: IBM

Inventor： BENNETT REID S ,  ELLINGBOE ALBERT R ,  GIFFORD GEORGE G ,  HALLER KURT L ,  MCKILLOP JOHN S ,  SELWYN GARY S ,  SINGH JYOTHI

IPC: C23F4/00 ,  C23C16/44 ,  C23C16/515 ,  H01J37/32 ,  H01L21/302 ,  H01L21/461

Abstract: FI9-89-005 METHODS AND APPARATUS FOR CONTAMINATION CONTROL IN PLASMA PROCESSING Contamination levels in plasma processes are reduced during plasma processing, by prevention of formation of particles, by preventing entry of particles externally introduced or by removing particles spontaneously formed from chemical and/or mechanical sources. Some techniques for prevention of formation of particles include interruption of the plasma by pulsing the source of plasma energy periodically, or application of energy to provide mechanical agitation such as mechanical shockwaves, acoustic stress, ultrasonic stress, vibrational stress, thermal stress, and pressure stress. Following a period of applied stress, a tool is pumped out (if a plasma is used, the glow is first discontinued), vented, opened and flaked or particulate material is cleaned from the lower electrode and other surfaces. A burst of filtered air or nitrogen, or a vacuum cleaner is used for removal of deposition debris while the vented tool is open. Following this procedure, the tool is then be used for product runs. Alternatively, improvement of semiconductor process yields can be achieved by addition of reagents to getter chemical precursors of contamination particulates and by filtration of particulates from feedgas before plasma processing. The efficiency and endpoint for the applied stress are determined, by laser light scattering, using a pulsed or continuous laser source, e.g. a HeNe laser.

公开(公告)号：DE69836117T2

公开(公告)日：2007-04-19

申请号：DE69836117

申请日：1998-07-28

Applicant: SIEMENS AG ,  IBM

Inventor： AJMERA ATUL C ,  DEHM CHRISTINE ,  DOMENICUCCI ANTHONY G ,  GIFFORD GEORGE G ,  LOH STEPHEN K ,  PARKS CHRISTOPHER ,  SARDESAI VIRAJI Y

IPC: H01L21/28 ,  H01L29/49

Abstract: A "porous barrier" is formed without formation of a discrete barrier layer by enriching grain boundaries of a body of polysilicon with nitrogen to inhibit thermal mobility of silicon species therealong. In a polycide gate/interconnect structure, the reduced mobility of silicon suppresses agglomeration of silicon in a metal silicide layer formed thereon. Since silicon agglomeration is a precursor of a polycide inversion phenomenon, polycide inversion which can pierce an underlying oxide and cause device failure is effectively avoided. The increased thermal stability of polycide structures and other structures including a body of polysilicon thus increases the heat budget that can be withstood by the structure and increases the manufacturing process window imposed by the presence of polysilicon which can be exploited in other processes such as annealing to develop a low resistance phase of refractory metal silicide included in the polycide structure, drive-in annealing for formation of source/drain regions of field effect transistors and the like.

公开(公告)号：DE69836117D1

公开(公告)日：2006-11-23

申请号：DE69836117

申请日：1998-07-28

Applicant: SIEMENS AG ,  IBM

Inventor： AJMERA ATUL C ,  DEHM CHRISTINE ,  DOMENICUCCI ANTHONY G ,  GIFFORD GEORGE G ,  LOH STEPHEN K ,  PARKS CHRISTOPHER ,  SARDESAI VIRAJI Y

IPC: H01L21/28 ,  H01L29/49

Abstract: A "porous barrier" is formed without formation of a discrete barrier layer by enriching grain boundaries of a body of polysilicon with nitrogen to inhibit thermal mobility of silicon species therealong. In a polycide gate/interconnect structure, the reduced mobility of silicon suppresses agglomeration of silicon in a metal silicide layer formed thereon. Since silicon agglomeration is a precursor of a polycide inversion phenomenon, polycide inversion which can pierce an underlying oxide and cause device failure is effectively avoided. The increased thermal stability of polycide structures and other structures including a body of polysilicon thus increases the heat budget that can be withstood by the structure and increases the manufacturing process window imposed by the presence of polysilicon which can be exploited in other processes such as annealing to develop a low resistance phase of refractory metal silicide included in the polycide structure, drive-in annealing for formation of source/drain regions of field effect transistors and the like.