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    Apparatus for mapping scratches in an oxide film
    1.
    发明授权
    Apparatus for mapping scratches in an oxide film 失效
    用于绘制氧化膜中划痕的装置

    公开(公告)号：US6291833B2

    公开(公告)日：2001-09-18

    申请号：US46448699

    申请日：1999-12-15

    Applicant: IBM

    Inventor： LANDERS WILLIAM FRANCIS ,  SINGH JYOTHI

    IPC: H01L21/66 ,  H01L23/544 ,  H01L23/58

    CPC classification number: H01L22/34 ,  H01L22/12 ,  Y10S438/959

    Abstract: A method and apparatus for detecting scratches on a wafer surface. The method comprises the use of a monitor wafer which has a substrate, a first layer deposited on the substrate, and a second layer deposited on the first layer. The first and second layers have contrasting work functions such that when short wavelength light is directed on the monitor wafer, scratches through the second layer can be detected.

    Abstract translation: 一种用于检测晶片表面上的划痕的方法和装置。 该方法包括使用具有衬底，沉积在衬底上的第一层和沉积在第一层上的第二层的监测晶片。 第一层和第二层具有对比的功能，使得当短波长的光被引导到监视器晶片上时，可以检测到穿过第二层的划痕。

    PLASMA AMPLIFIED PHOTOELECTRON PROCESS ENDPOINT DETECTION APPARATUS
    2.
    发明专利
    PLASMA AMPLIFIED PHOTOELECTRON PROCESS ENDPOINT DETECTION APPARATUS 未知

    公开(公告)号：CA1289270C

    公开(公告)日：1991-09-17

    申请号：CA579536

    申请日：1988-10-05

    Applicant: IBM

    Inventor： KELLER JOHN H ,  SELWYN GARY S ,  SINGH JYOTHI

    IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3065

    Abstract: PLASMA AMPLIFIED PHOTOELECTRON PROCESS ENDPOINT DETECTION APPARATUS A plasma processing apparatus and process endpoint detection method including a plasma chamber for processing an item that has a first portion of a first material and a second portion of a second material, with the first and second materials having different work functions, and a structure for generating a plasma in the plasma chamber. The plasma generating structure including at least a pair of RF-power electrodes with one of them being excited by an RF excitation frequency. The apparatus further includes a structure for generating and ejecting electrons from the second material only when the second material is exposed to the plasma, and a structure for increasing the energies of these generated electrons and accelerating these electrons into the etching plasma with sufficient energy to generate secondary electrons in the plasma. The apparatus further includes a structure for receiving a plasma discharge voltage signal, a structure for filtering the discharge electrical voltage signal to remove the RF excitation frequency and any DC components therein, and a structure for amplifying the natural frequencies of excitation and decay of the plasma discharge voltage perturbation signal, to thereby detect the processing endpoint.

    METHOD AND APPARATUS FOR OPTICAL EMISSION END POINT DETECTION IN PLASMA ETCHING PROCESS
    3.
    发明专利
    METHOD AND APPARATUS FOR OPTICAL EMISSION END POINT DETECTION IN PLASMA ETCHING PROCESS 未知

    公开(公告)号：CA2104072C

    公开(公告)日：1995-09-12

    申请号：CA2104072

    申请日：1993-08-13

    Applicant: IBM

    Inventor： O'NEILL JAMES A ,  PASSOW MICHAEL L ,  SINGH JYOTHI

    IPC: G01J3/00 ,  G01J3/443 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/00 ,  H05H1/46

    Abstract: An apparatus and method for determining the time at which a plasma etching process should be terminated. The process generates at least one etch product species and a continuum plasma emission. The apparatus monitors the optical emission intensity of the plasma in a narrow band centered about a predetermined spectral line and generates a first signal indicative of the spectral intensity of the etch product species. The apparatus further monitors the optical emission intensity of the plasma in a wide band and generates a second signal indicative of the spectral intensity of the continuum plasma emission. The apparatus further monitors the magnitudes of the first and second signals and generates a termination signal when the magnitudes diverge.

    METHODS AND APPARATUS FOR CONTAMINATION CONTROL IN PLASMA PROCESSING
    5.
    发明专利
    METHODS AND APPARATUS FOR CONTAMINATION CONTROL IN PLASMA PROCESSING 未知

    公开(公告)号：CA2024637A1

    公开(公告)日：1991-04-24

    申请号：CA2024637

    申请日：1990-09-05

    Applicant: IBM

    Inventor： BENNETT REID S ,  ELLINGBOE ALBERT R ,  GIFFORD GEORGE G ,  HALLER KURT L ,  MCKILLOP JOHN S ,  SELWYN GARY S ,  SINGH JYOTHI

    IPC: C23F4/00 ,  C23C16/44 ,  C23C16/515 ,  H01J37/32 ,  H01L21/302 ,  H01L21/461

    Abstract: FI9-89-005 METHODS AND APPARATUS FOR CONTAMINATION CONTROL IN PLASMA PROCESSING Contamination levels in plasma processes are reduced during plasma processing, by prevention of formation of particles, by preventing entry of particles externally introduced or by removing particles spontaneously formed from chemical and/or mechanical sources. Some techniques for prevention of formation of particles include interruption of the plasma by pulsing the source of plasma energy periodically, or application of energy to provide mechanical agitation such as mechanical shockwaves, acoustic stress, ultrasonic stress, vibrational stress, thermal stress, and pressure stress. Following a period of applied stress, a tool is pumped out (if a plasma is used, the glow is first discontinued), vented, opened and flaked or particulate material is cleaned from the lower electrode and other surfaces. A burst of filtered air or nitrogen, or a vacuum cleaner is used for removal of deposition debris while the vented tool is open. Following this procedure, the tool is then be used for product runs. Alternatively, improvement of semiconductor process yields can be achieved by addition of reagents to getter chemical precursors of contamination particulates and by filtration of particulates from feedgas before plasma processing. The efficiency and endpoint for the applied stress are determined, by laser light scattering, using a pulsed or continuous laser source, e.g. a HeNe laser.

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