公开(公告)号：CA1289270C

公开(公告)日：1991-09-17

申请号：CA579536

申请日：1988-10-05

Applicant: IBM

Inventor： KELLER JOHN H ,  SELWYN GARY S ,  SINGH JYOTHI

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3065

Abstract: PLASMA AMPLIFIED PHOTOELECTRON PROCESS ENDPOINT DETECTION APPARATUS A plasma processing apparatus and process endpoint detection method including a plasma chamber for processing an item that has a first portion of a first material and a second portion of a second material, with the first and second materials having different work functions, and a structure for generating a plasma in the plasma chamber. The plasma generating structure including at least a pair of RF-power electrodes with one of them being excited by an RF excitation frequency. The apparatus further includes a structure for generating and ejecting electrons from the second material only when the second material is exposed to the plasma, and a structure for increasing the energies of these generated electrons and accelerating these electrons into the etching plasma with sufficient energy to generate secondary electrons in the plasma. The apparatus further includes a structure for receiving a plasma discharge voltage signal, a structure for filtering the discharge electrical voltage signal to remove the RF excitation frequency and any DC components therein, and a structure for amplifying the natural frequencies of excitation and decay of the plasma discharge voltage perturbation signal, to thereby detect the processing endpoint.

公开(公告)号：BR9005281A

公开(公告)日：1991-09-17

申请号：BR9005281

申请日：1990-10-19

Applicant: IBM

Inventor： BENNETT REID S ,  ELLINGBOE ALBERT R ,  GIFFORD GEORGE G ,  HALER KURT L ,  MCKILLOP JOHN S ,  SELWYN GARY S ,  SINGH JYOTHI

IPC: C23F4/00 ,  C23C16/44 ,  C23C16/515 ,  H01J37/32 ,  H01L21/302 ,  H05H1/24

公开(公告)号：CA2024637A1

公开(公告)日：1991-04-24

申请号：CA2024637

申请日：1990-09-05

Applicant: IBM

Inventor： BENNETT REID S ,  ELLINGBOE ALBERT R ,  GIFFORD GEORGE G ,  HALLER KURT L ,  MCKILLOP JOHN S ,  SELWYN GARY S ,  SINGH JYOTHI

IPC: C23F4/00 ,  C23C16/44 ,  C23C16/515 ,  H01J37/32 ,  H01L21/302 ,  H01L21/461

Abstract: FI9-89-005 METHODS AND APPARATUS FOR CONTAMINATION CONTROL IN PLASMA PROCESSING Contamination levels in plasma processes are reduced during plasma processing, by prevention of formation of particles, by preventing entry of particles externally introduced or by removing particles spontaneously formed from chemical and/or mechanical sources. Some techniques for prevention of formation of particles include interruption of the plasma by pulsing the source of plasma energy periodically, or application of energy to provide mechanical agitation such as mechanical shockwaves, acoustic stress, ultrasonic stress, vibrational stress, thermal stress, and pressure stress. Following a period of applied stress, a tool is pumped out (if a plasma is used, the glow is first discontinued), vented, opened and flaked or particulate material is cleaned from the lower electrode and other surfaces. A burst of filtered air or nitrogen, or a vacuum cleaner is used for removal of deposition debris while the vented tool is open. Following this procedure, the tool is then be used for product runs. Alternatively, improvement of semiconductor process yields can be achieved by addition of reagents to getter chemical precursors of contamination particulates and by filtration of particulates from feedgas before plasma processing. The efficiency and endpoint for the applied stress are determined, by laser light scattering, using a pulsed or continuous laser source, e.g. a HeNe laser.