公开(公告)号：DE3676832D1

公开(公告)日：1991-02-21

申请号：DE3676832

申请日：1986-02-07

Applicant: IBM

Inventor： BLAKESLEE MARYBELLE C ,  CHANCE DUDLEY AUGUSTUS ,  EASTMAN DEAN ERIC ,  GNIEWEK JOHN J ,  HO CHUNG WEN ,  LEVINE ERNEST N ,  ORDONEZ JOSE E ,  REILEY TIMOTHY CLARK ,  SKARVINKO EUGENE R

IPC: H01L21/60 ,  H01L23/498 ,  H05K1/03 ,  H05K3/34 ,  H05K3/40

公开(公告)号：DE3380413D1

公开(公告)日：1989-09-21

申请号：DE3380413

申请日：1983-04-20

Applicant: RICHARDSON CHEMICAL CO ,  IBM

Inventor： BAUDRAND DONALD W ,  POWERS-FLEMING REBECCA ,  GNIEWEK JOHN J ,  HARVILCHUCK JOSEPH M ,  SCHMECKENBECHER ARNOLD F

IPC: H05K3/46 ,  C23C18/16 ,  C23C18/34 ,  H01L21/48 ,  H01L23/12 ,  H05K3/24

Abstract: A process for simultaneously selectively depositing a high purity nickel containing alloy (i.e. a nickel-boron alloy having a nickel content in excess of 99.5 percent) over a preformed metallurgy pattern (including the individual, electrically isolated contact pads and the seal band area thereon) on the top-side dielectric surface of a multi-layer ceramic module. The metallurgy pattern on such top-side surface of such module is appropriately catalyzed and then immersed in a bath which is essentially lead-free and which includes a source of nickel ions, a borane reducing agent, and an effective amount of an organic divalent sulfur compound, preferably thiodiglycollic acid. The contact pads and the seal band area so plated exhibit an exceptionally uniform layer of nickel-boron alloy, free of surface irregularities, which layer is characterized by low contact resistance, excellent wire bonding and eutectic diode bonding characteristics and is both crack-free at the time of its being deposited and remains crack-free under brazing conditions throughout the life of the component.

公开(公告)号：CA1207464A

公开(公告)日：1986-07-08

申请号：CA426397

申请日：1983-04-21

Applicant: RICHARDSON CHEMICAL CO ,  IBM

Inventor： BAUDRAND DONALD W ,  FLEMING REBECCA P ,  GNIEWEK JOHN J ,  HARVILCHUCK JOSEPH M ,  SCHMECKENBECHER ARNOLD F

IPC: H05K3/46 ,  C23C18/16 ,  C23C18/34 ,  H01L21/48 ,  H01L23/12 ,  H05K3/24 ,  H05K1/02 ,  H05K3/22

Abstract: Process for Selectively Depositing a NickelBoron Coating Over a Metallurgy Pattern on a Dielectric Substrate and Products Produced Thereby A process for simultaneously selectively depositing a high purity nickel containing alloy (i.e. a nickel-boron alloy having a nickel content in excess of 93.5 percent) over a preformed metallurgy pattern (including the individual, electrically isolated contact pads and the seal band area thereon) on the topside dielectric surface of a multi-layer ceramic module. The metallurgy pattern on such top-side surface of such module is appropriately catalyzed and then immersed in a bath which is essentially lead-free and which includes a source of nickel ions, a borane reducing agent, and an effective amount of an organic divalent sulfur compound, preferably thiodiglycollic acid. The contact pads and the seal band area so plated exhibit an exceptionally uniform layer of nickel-boron alloy, free of surface irregularities, which layer is characterized by low contact resistance, excellent wire bonding and eutectic diode bonding characteristics and is both crack-free at the time of its being deposited and remains crack-free under brazing conditions throughout the life of the component.