公开(公告)号：JPH1062994A

公开(公告)日：1998-03-06

申请号：JP16565097

申请日：1997-06-23

Applicant: IBM

Inventor： GREGORY BUREITA ,  WILLIAM R BURUNSUBUORUDO ,  WILLIAM E KONRII JR ,  KATHLEEN M KOONETSUTO ,  MAHAMUUDO EMU HOJISUTE

IPC: G03F7/004 ,  G03F7/038 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To obtain a negative resist fit for a wide concn. range of a developer and capable of forming a sharp image under various processing conditions by protecting part of hydroxyl group units on the arom. rings of a resin based on polyhydroxystyrene(PHS) with inert groups having relatively low reactivity with a strong acid. SOLUTION: This negative resist is based on a polymer resin contg. PHS having -OH sites converted into acid-stable -OR groups (R is prim. or sec. alkyl or -CO2 Y and Y is prim. or sec. alkyl not activated so as to generate a carbonium ion) in such a ratio as to effectively ensure the stability of a resist film under severe development conditions. When about 5-20% of all -OH sites are converted into -OR groups, the resultant resist is made fit for a developer used in an i-line producer at present, that is 0.263N TMAH (tetramethylammonium hydroxide).

公开(公告)号：JP2003292716A

公开(公告)日：2003-10-15

申请号：JP2003049993

申请日：2003-02-26

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーション

Inventor： GREGORY BUREITA ,  ITO HIROSHI ,  TRUONG HOA D

IPC: G03F7/027 ,  C08F212/14 ,  C08F216/14 ,  C08F232/08 ,  C08L33/16 ,  C08L45/00 ,  C08L101/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

CPC classification number: G03F7/0395 ,  C08L33/16 ,  C08L2205/02 ,  G03F7/0046 ,  G03F7/0382 ,  Y10S430/108 ,  C08L2666/04

Abstract: PROBLEM TO BE SOLVED: To prepare a substantially homogeneous polymer blend suitable for use in photoresist compositions for lithography.
SOLUTION: The polymer blend is provided for use in the photoresist compositions (specifically, chemical amplification-type photoresists) for lithography. In a preferable embodiment, the polymer blend is substantially transparent for far-ultraviolet radiation (i.e., a radiation having >250 nm wavelengths including 157 nm, 193 nm and 248 nm wavelengths) and has improved photosensitivity and resolution. The respective processes for preparing and using the polymer blend are also provided as well as the photoresist compositions for lithography containing the polymer blend.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：制备适用于光刻胶的光致抗蚀剂组合物的基本均匀的聚合物共混物。 解决方案：聚合物共混物用于光刻胶组合物（特别是化学放大型光致抗蚀剂）用于光刻。 在优选的实施方案中，聚合物共混物对于远紫外辐射（即，具有包括157nm，193nm和248nm波长的> 250nm波长的辐射）基本上是透明的，并且具有改善的光敏性和分辨率。 还提供了制备和使用聚合物共混物的各个方法以及用于含有聚合物共混物的光刻的光致抗蚀剂组合物。 版权所有（C）2004，JPO

公开(公告)号：JP2004046098A

公开(公告)日：2004-02-12

申请号：JP2003128938

申请日：2003-05-07

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ALLEN ROBERT DAVID ,  GREGORY BUREITA ,  BROCK PHILLIP ,  DIPIETRO RICHARD A ,  FENZEL-ALEXANDER DEBRA ,  LARSON CARL ,  MEDEIROS DAVID ,  PFEIFFER DIRK ,  SOORIYAKUMARAN RATNAM ,  TRUONG HOA D ,  WALLRAFF GREGORY M

IPC: C08F20/22 ,  C08F220/28 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

CPC classification number: C08F220/22 ,  C08F220/28 ,  G03F7/0046 ,  G03F7/0382 ,  Y10S430/108

Abstract: PROBLEM TO BE SOLVED: To provide a photoresist composition containing a polymer having at least one methacrylate monomer and to provide a method of pattering a substrate using the photoresist composition. SOLUTION: The photoresist composition contains a methacrylate monomer of formula 1 where R 1 represents hydrogen (H), a linear or branched 1-20C alkyl group or a semi- or perfluorinated linear or branched 1-20C alkyl group; where R 2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF 3 ) group bonded to each carbon of the substituted aliphatic group or a substituted or unsubstituted aromatic group; and where R 3 represents hydrogen (H), methyl (CH 3 ), trifluoromethyl (CF 3 ), difluoromethyl (CHF 2 ) or fluoromethyl (CH 2 F). COPYRIGHT: (C)2004,JPO