公开(公告)号：JP2000089453A

公开(公告)日：2000-03-31

申请号：JP24203899

申请日：1999-08-27

Applicant: IBM

Inventor： WILLIAM R BURUNSUBUORUDO ,  KATNANI AHMAD D ,  PUSHUKARA R VARAANASHII

IPC: H01L21/027 ,  G03F7/004 ,  G03F7/039

Abstract: PROBLEM TO BE SOLVED: To provide a acid-sensitive positive photoresist composition improved in storage life by incorporating the acid-sensitive positive photoresist polymer component and a radiation-sensitive acid-generating component and an inactivated aromatic amine compound. SOLUTION: This photoresist composition comprises the acid-sensitive positive photoresist polymer component selected from a group comprising an acid- sensitive photoresist polymer, an acid-sensitive photoresist polymer having an acid-sensitive compound added, and an acid-insensitive alkali-soluble photoresist polymer having an acid-sensitive alkali-soluble inhibitor added; and the radiation- sensitive acid generating component; and the inactivated aromatic amine compound. It is preferred that the photoresist polymer has an acid-instable group producing an acid, when it is cleft. This composition may contain a solvent for a nonexposed resist.

公开(公告)号：JPH1062994A

公开(公告)日：1998-03-06

申请号：JP16565097

申请日：1997-06-23

Applicant: IBM

Inventor： GREGORY BUREITA ,  WILLIAM R BURUNSUBUORUDO ,  WILLIAM E KONRII JR ,  KATHLEEN M KOONETSUTO ,  MAHAMUUDO EMU HOJISUTE

IPC: G03F7/004 ,  G03F7/038 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To obtain a negative resist fit for a wide concn. range of a developer and capable of forming a sharp image under various processing conditions by protecting part of hydroxyl group units on the arom. rings of a resin based on polyhydroxystyrene(PHS) with inert groups having relatively low reactivity with a strong acid. SOLUTION: This negative resist is based on a polymer resin contg. PHS having -OH sites converted into acid-stable -OR groups (R is prim. or sec. alkyl or -CO2 Y and Y is prim. or sec. alkyl not activated so as to generate a carbonium ion) in such a ratio as to effectively ensure the stability of a resist film under severe development conditions. When about 5-20% of all -OH sites are converted into -OR groups, the resultant resist is made fit for a developer used in an i-line producer at present, that is 0.263N TMAH (tetramethylammonium hydroxide).