NEGATIVE RESIST CONTAINING PHS HAVING INERT PROTECTIVE GROUP

    公开(公告)号:JPH1062994A

    公开(公告)日:1998-03-06

    申请号:JP16565097

    申请日:1997-06-23

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To obtain a negative resist fit for a wide concn. range of a developer and capable of forming a sharp image under various processing conditions by protecting part of hydroxyl group units on the arom. rings of a resin based on polyhydroxystyrene(PHS) with inert groups having relatively low reactivity with a strong acid. SOLUTION: This negative resist is based on a polymer resin contg. PHS having -OH sites converted into acid-stable -OR groups (R is prim. or sec. alkyl or -CO2 Y and Y is prim. or sec. alkyl not activated so as to generate a carbonium ion) in such a ratio as to effectively ensure the stability of a resist film under severe development conditions. When about 5-20% of all -OH sites are converted into -OR groups, the resultant resist is made fit for a developer used in an i-line producer at present, that is 0.263N TMAH (tetramethylammonium hydroxide).

Patent Agency Ranking