公开(公告)号：JPH1062994A

公开(公告)日：1998-03-06

申请号：JP16565097

申请日：1997-06-23

Applicant: IBM

Inventor： GREGORY BUREITA ,  WILLIAM R BURUNSUBUORUDO ,  WILLIAM E KONRII JR ,  KATHLEEN M KOONETSUTO ,  MAHAMUUDO EMU HOJISUTE

IPC: G03F7/004 ,  G03F7/038 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To obtain a negative resist fit for a wide concn. range of a developer and capable of forming a sharp image under various processing conditions by protecting part of hydroxyl group units on the arom. rings of a resin based on polyhydroxystyrene(PHS) with inert groups having relatively low reactivity with a strong acid. SOLUTION: This negative resist is based on a polymer resin contg. PHS having -OH sites converted into acid-stable -OR groups (R is prim. or sec. alkyl or -CO2 Y and Y is prim. or sec. alkyl not activated so as to generate a carbonium ion) in such a ratio as to effectively ensure the stability of a resist film under severe development conditions. When about 5-20% of all -OH sites are converted into -OR groups, the resultant resist is made fit for a developer used in an i-line producer at present, that is 0.263N TMAH (tetramethylammonium hydroxide).