公开(公告)号：GB2595103B

公开(公告)日：2022-10-05

申请号：GB202110858

申请日：2019-12-12

Applicant: IBM

Inventor： BENJAMIN BRIGGS ,  HOSADURGA SHOBHA ,  DEVIKA SIL ,  THOMAS JASPER HAIGH JR ,  DONALD FRANCIS CANAPERI ,  HAN YOU ,  HUY CAO ,  SON NGUYEN

IPC: H01L21/312 ,  H01L21/288 ,  H01L23/532

Abstract: A method of fabricating a dielectric film includes depositing a first precursor on a substrate. The first precursor includes a cyclic carbosiloxane group comprising a six-membered ring. The method also includes depositing a second precursor on the substrate. The first precursor and the second precursor form a preliminary film on the substrate, and the second precursor includes silicon, carbon, and hydrogen. The method further includes exposing the preliminary film to energy from an energy source to form a porous dielectric film.

公开(公告)号：GB2595103A

公开(公告)日：2021-11-17

申请号：GB202110858

申请日：2019-12-12

Applicant: IBM

Inventor： BENJAMIN BRIGGS ,  HOSADURGA SHOBHA ,  DEVIKA SIL ,  THOMAS JASPER HAIGH JR ,  DONALD FRANCIS CANAPERI ,  HAN YOU ,  HUY CAO ,  SON NGUYEN

IPC: H01L21/312 ,  H01L21/288 ,  H01L23/532

Abstract: A method of fabricating a dielectric film includes depositing a first precursor on a substrate. The first precursor includes a cyclic carbosiloxane group comprising a six-membered ring. The method also includes depositing a second precursor on the substrate. The first precursor and the second precursor form a preliminary film on the substrate, and the second precursor includes silicon, carbon, and hydrogen. The method further includes exposing the preliminary film to energy from an energy source to form a porous dielectric film.