公开(公告)号：GB2581082A

公开(公告)日：2020-08-05

申请号：GB202005861

申请日：2018-11-01

Applicant: IBM

Inventor： TAKASHI ANDO ,  CHIH-CHAO YANG ,  BENJAMIN BRIGGS ,  MICHAEL RIZZOLO ,  LAWRENCE CLEVENGER

IPC: H01L45/00

Abstract: A method is presented for forming a semiconductor device. The method includes depositing an insulating layer over a semiconductor substrate, etching the insulating layer to form a plurality of trenches for receiving a first conducting material, forming a resistive switching memory element over at least one trench of the plurality of trenches, the resistive switching memory element having a conducting cap formed thereon, and depositing a dielectric cap over the trenches. The method further includes etching portions of the insulating layer to expose a section of the dielectric cap formed over the resistive switching memory element, etching the exposed section of the dielectric cap to expose the conducting cap of the resistive switching memory element, and forming a barrier layer in direct contact with the exposed section of the conducting cap.

公开(公告)号：GB2595103A

公开(公告)日：2021-11-17

申请号：GB202110858

申请日：2019-12-12

Applicant: IBM

Inventor： BENJAMIN BRIGGS ,  HOSADURGA SHOBHA ,  DEVIKA SIL ,  THOMAS JASPER HAIGH JR ,  DONALD FRANCIS CANAPERI ,  HAN YOU ,  HUY CAO ,  SON NGUYEN

IPC: H01L21/312 ,  H01L21/288 ,  H01L23/532

Abstract: A method of fabricating a dielectric film includes depositing a first precursor on a substrate. The first precursor includes a cyclic carbosiloxane group comprising a six-membered ring. The method also includes depositing a second precursor on the substrate. The first precursor and the second precursor form a preliminary film on the substrate, and the second precursor includes silicon, carbon, and hydrogen. The method further includes exposing the preliminary film to energy from an energy source to form a porous dielectric film.

公开(公告)号：GB2595103B

公开(公告)日：2022-10-05

申请号：GB202110858

申请日：2019-12-12

Applicant: IBM

Inventor： BENJAMIN BRIGGS ,  HOSADURGA SHOBHA ,  DEVIKA SIL ,  THOMAS JASPER HAIGH JR ,  DONALD FRANCIS CANAPERI ,  HAN YOU ,  HUY CAO ,  SON NGUYEN

IPC: H01L21/312 ,  H01L21/288 ,  H01L23/532

Abstract: A method of fabricating a dielectric film includes depositing a first precursor on a substrate. The first precursor includes a cyclic carbosiloxane group comprising a six-membered ring. The method also includes depositing a second precursor on the substrate. The first precursor and the second precursor form a preliminary film on the substrate, and the second precursor includes silicon, carbon, and hydrogen. The method further includes exposing the preliminary film to energy from an energy source to form a porous dielectric film.

公开(公告)号：GB2581082B

公开(公告)日：2022-07-06

申请号：GB202005861

申请日：2018-11-01

Applicant: IBM

Inventor： TAKASHI ANDO ,  CHIH-CHAO YANG ,  BENJAMIN BRIGGS ,  MICHAEL RIZZOLO ,  LAWRENCE CLEVENGER

IPC: H01L45/00 ,  G11C11/56 ,  G11C13/00 ,  H01L27/24

Abstract: A method is presented for forming a semiconductor device. The method includes depositing an insulating layer over a semiconductor substrate, etching the insulating layer to form a plurality of trenches for receiving a first conducting material, forming a resistive switching memory element over at least one trench of the plurality of trenches, the resistive switching memory element having a conducting cap formed thereon, and depositing a dielectric cap over the trenches. The method further includes etching portions of the insulating layer to expose a section of the dielectric cap formed over the resistive switching memory element, etching the exposed section of the dielectric cap to expose the conducting cap of the resistive switching memory element, and forming a barrier layer in direct contact with the exposed section of the conducting cap.