公开(公告)号：GB2603346A

公开(公告)日：2022-08-03

申请号：GB202204025

申请日：2020-08-14

Applicant: IBM

Inventor： NICHOLAS ANTHONY LANZILLO ,  HOSADURGA SHOBHA ,  HUAI HUANG ,  JUNLI WANG ,  KOICHI MOTOYAMA ,  CHRISTOPHER PENNY ,  LAWRENCE CLEVENGER

IPC: H01L21/768

Abstract: Techniques for forming trapezoidal-shaped interconnects are provided. In one aspect, a method for forming an interconnect structure includes: patterning a trench(es) in a dielectric having a V-shaped profile with a rounded bottom; depositing a liner into the trench(es) using PVD which opens-up the trench(es) creating a trapezoidal-shaped profile in the trench(es); removing the liner from the trench(es) selective to the dielectric whereby, following the removing, the trench(es) having the trapezoidal-shaped profile remains in the dielectric; depositing a conformal barrier layer into and lining the trench(es) having the trapezoidal-shaped profile; depositing a conductor into and filling the trench(es) having the trapezoidal-shaped profile over the conformal barrier layer; and polishing the conductor and the conformal barrier layer down to the dielectric. An interconnect structure is also provided.

公开(公告)号：GB2595103A

公开(公告)日：2021-11-17

申请号：GB202110858

申请日：2019-12-12

Applicant: IBM

Inventor： BENJAMIN BRIGGS ,  HOSADURGA SHOBHA ,  DEVIKA SIL ,  THOMAS JASPER HAIGH JR ,  DONALD FRANCIS CANAPERI ,  HAN YOU ,  HUY CAO ,  SON NGUYEN

IPC: H01L21/312 ,  H01L21/288 ,  H01L23/532

Abstract: A method of fabricating a dielectric film includes depositing a first precursor on a substrate. The first precursor includes a cyclic carbosiloxane group comprising a six-membered ring. The method also includes depositing a second precursor on the substrate. The first precursor and the second precursor form a preliminary film on the substrate, and the second precursor includes silicon, carbon, and hydrogen. The method further includes exposing the preliminary film to energy from an energy source to form a porous dielectric film.

公开(公告)号：GB2603346B

公开(公告)日：2023-12-20

申请号：GB202204025

申请日：2020-08-14

Applicant: IBM

Inventor： NICHOLAS ANTHONY LANZILLO ,  HOSADURGA SHOBHA ,  HUAI HUANG ,  JUNLI WANG ,  KOICHI MOTOYAMA ,  CHRISTOPHER PENNY ,  LAWRENCE CLEVENGER

IPC: H01L21/768

Abstract: Techniques for forming trapezoidal-shaped interconnects are provided. In one aspect, a method for forming an interconnect structure includes: patterning a trench(es) in a dielectric having a V-shaped profile with a rounded bottom; depositing a liner into the trench(es) using PVD which opens-up the trench(es) creating a trapezoidal-shaped profile in the trench(es); removing the liner from the trench(es) selective to the dielectric whereby, following the removing, the trench(es) having the trapezoidal-shaped profile remains in the dielectric; depositing a conformal barrier layer into and lining the trench(es) having the trapezoidal-shaped profile; depositing a conductor into and filling the trench(es) having the trapezoidal-shaped profile over the conformal barrier layer; and polishing the conductor and the conformal barrier layer down to the dielectric. An interconnect structure is also provided.

公开(公告)号：GB2595103B

公开(公告)日：2022-10-05

申请号：GB202110858

申请日：2019-12-12

Applicant: IBM

Inventor： BENJAMIN BRIGGS ,  HOSADURGA SHOBHA ,  DEVIKA SIL ,  THOMAS JASPER HAIGH JR ,  DONALD FRANCIS CANAPERI ,  HAN YOU ,  HUY CAO ,  SON NGUYEN

IPC: H01L21/312 ,  H01L21/288 ,  H01L23/532

Abstract: A method of fabricating a dielectric film includes depositing a first precursor on a substrate. The first precursor includes a cyclic carbosiloxane group comprising a six-membered ring. The method also includes depositing a second precursor on the substrate. The first precursor and the second precursor form a preliminary film on the substrate, and the second precursor includes silicon, carbon, and hydrogen. The method further includes exposing the preliminary film to energy from an energy source to form a porous dielectric film.