公开(公告)号：GB2603684A

公开(公告)日：2022-08-10

申请号：GB202204972

申请日：2020-09-22

Applicant: IBM

Inventor： ALEXANDER REZNICEK ,  DEVIKA SIL ,  OLEG GLUSCHENKOV ,  YASIR SULEHRIA

IPC: H01L43/02 ,  H01L43/08

Abstract: A hardened gap fill dielectric material that has improved chemical and physical properties is formed laterally adjacent to a multilayered magnetic tunnel junction (MTJ) pillar and a top electrode structure of a memory structure. The harden gap fill dielectric material can be formed by introducing, via ion implantation, a bond breaking additive into an as deposited gap fill dielectric material layer and thereafter curing the gap fill dielectric material layer containing the bond breaking additive. The curing includes UV curing alone, or UV curing in combination with laser annealing. The curing employed in the present application does not negatively impact the MTJ pillar or top electrode structure.

公开(公告)号：GB2607792B

公开(公告)日：2024-12-18

申请号：GB202212342

申请日：2021-01-05

Applicant: IBM

Inventor： ALEXANDER REZNICEK ,  OLEG GLUSCHENKOV ,  YASIR SULEHRIA ,  DEVIKA SIL

IPC: H10N50/01

Abstract: Large grain metal bitlines are formed above magnetic tunnel junction pillars used as MRAM bits without materially affecting the magnetic properties of the magnetic tunnel junctions. A copper or copper alloy bitline having relatively small grains is formed over the pillars. Laser annealing is employed to melt the bitline. Subsequent cooling and recrystallization results in a reduction of the number of grain boundaries in the bitline and a reduction in bitline effective resistivity. Multiple melt/cool cycles may be used. Bitline grains are vertically aligned with the pillars in a resulting structure.

公开(公告)号：GB2595103B

公开(公告)日：2022-10-05

申请号：GB202110858

申请日：2019-12-12

Applicant: IBM

Inventor： BENJAMIN BRIGGS ,  HOSADURGA SHOBHA ,  DEVIKA SIL ,  THOMAS JASPER HAIGH JR ,  DONALD FRANCIS CANAPERI ,  HAN YOU ,  HUY CAO ,  SON NGUYEN

IPC: H01L21/312 ,  H01L21/288 ,  H01L23/532

Abstract: A method of fabricating a dielectric film includes depositing a first precursor on a substrate. The first precursor includes a cyclic carbosiloxane group comprising a six-membered ring. The method also includes depositing a second precursor on the substrate. The first precursor and the second precursor form a preliminary film on the substrate, and the second precursor includes silicon, carbon, and hydrogen. The method further includes exposing the preliminary film to energy from an energy source to form a porous dielectric film.

公开(公告)号：GB2607792A

公开(公告)日：2022-12-14

申请号：GB202212342

申请日：2021-01-05

Applicant: IBM

Inventor： YASIR SULEHRIA ,  ALEXANDER REZNICEK ,  OLEG GLUSCHENKOV ,  DEVIKA SIL

IPC: H01L43/08

Abstract: Large grain metal bitlines are formed above magnetic tunnel junction pillars used as MRAM bits without materially affecting the magnetic properties of the magnetic tunnel junctions. A copper or copper alloy bitline having relatively small grains is formed over the pillars. Laser annealing is employed to melt the bitline. Subsequent cooling and recrystallization results in a reduction of the number of grain boundaries in the bitline and a reduction in bitline effective resistivity. Multiple melt/cool cycles may be used. Bitline grains are vertically aligned with the pillars in a resulting structure.

公开(公告)号：GB2595103A

公开(公告)日：2021-11-17

申请号：GB202110858

申请日：2019-12-12

Applicant: IBM

Inventor： BENJAMIN BRIGGS ,  HOSADURGA SHOBHA ,  DEVIKA SIL ,  THOMAS JASPER HAIGH JR ,  DONALD FRANCIS CANAPERI ,  HAN YOU ,  HUY CAO ,  SON NGUYEN

IPC: H01L21/312 ,  H01L21/288 ,  H01L23/532

Abstract: A method of fabricating a dielectric film includes depositing a first precursor on a substrate. The first precursor includes a cyclic carbosiloxane group comprising a six-membered ring. The method also includes depositing a second precursor on the substrate. The first precursor and the second precursor form a preliminary film on the substrate, and the second precursor includes silicon, carbon, and hydrogen. The method further includes exposing the preliminary film to energy from an energy source to form a porous dielectric film.