公开(公告)号：JPH0212610A

公开(公告)日：1990-01-17

申请号：JP1009289

申请日：1989-01-20

Applicant: IBM

Inventor： ROBAATO EDOWAADO FUONTANA ,  JIEEMUSU KENTO HAWAADO ,  JIEEMUSU SHIIITANGU RII ,  HARARANBOSU REFUAKISU

IPC: G11B5/39

Abstract: PURPOSE: To make it possible to more meticulously control the resistivity character of a spacer layer by using nichrome or the nichrome added with chromium oxide as the spacer material of a magneto-resistive MR sensor. CONSTITUTION: This converter is provided with the thin-film MR layer 10 formed of a ferromagnetic material and the nonmagnetic thinfilm spacer layer 14 which comes into contact with the MR layer 10. The thin-film spacer layer 14 consists of the material selected from the group consisting of the nichrome and the nichrome contg. the chromium oxide. A soft magnetic material 12 is adhered in contact with the spacer layer 14 in such a manner that this material is arranged in parallel with the MR layer 10 isolatedly form the MR layer 10. The structure is capable of generating a bias in a transverse direction in at least part of the MR layer 10 and linearly maintaining the response of the part to be biased in the transverse direction of the MR layer 10. As a result, the MR sensor 8 including the nonmagnetic spacer layer 14 capable of strictly controlling the resistivity characteristic.

公开(公告)号：JPH0845032A

公开(公告)日：1996-02-16

申请号：JP12210495

申请日：1995-05-22

Applicant: IBM

Inventor： ROBAATO EDOWAADO FUONTANA ,  TSUAN RIN ,  CHIN FUA TSUAN

IPC: G01R33/09 ,  G11B5/39 ,  G11C11/15 ,  H01L43/10

Abstract: PURPOSE: To facilitate manufacture by overlaying an end region of a free ferromagnetic layer with a layer made of an antiferromagnetic material so as to bias the end region. CONSTITUTION: A buffer layer 62, a free ferromagnetic layer 63, a spacer layer 65 of copper, a constrained ferromagnetic layer 70 and an antiferromagnetic layer 66 are sequentially stacked on a substrate 61, thus constituting a spin valve sensor. The free ferromagnetic layer 63 is made of Ni80-85-Fe, and has magnetization in a direction of an arrow 64 when there is no external magnetic field. The antiferromagnetic layer 66 is made of Fe-Mn, and constrains magnetization of the constrained ferromagnetic layer 70 in a direction of an arrow 71 by exchange coupling. A layer 91 made of an Ni-Mn antiferromagnetic material biases the horizontal magnetization 64 of the free ferromagnetic layer 63 via an end region 90 made of Ni-Fe. The magnetization 64 of the free ferromagnetic layer 63 is rotated by a magnetic field from a magnetic recording medium, and a change in resistance caused by the rotation is taken out as a signal via a terminal layer 92.

公开(公告)号：JPH0757223A

公开(公告)日：1995-03-03

申请号：JP15726894

申请日：1994-07-08

Applicant: IBM

Inventor： MAOOMIN CHIEN ,  ROBAATO EDOWAADO FUONTANA ,  MOHAMADO TOUFUITSUKU KURAUNBI ,  KENESU CHINNYAN KUN ,  JIEEMUZU SAIITAN RII ,  JIEIISHIYURII JIERII RO ,  CHIN WA TSUAN ,  POOKAN WAN

IPC: G11B5/39

Abstract: PURPOSE: To minimize magnetic instability in the joined part between a MR layer and magnetic bias layer. CONSTITUTION: A magnetic resistant(MR) reading transducer 30 is provided with a passive end part zone separated with a central active zone 33. The MR layer 31 is substantially formed only on the central active zone 33, and the magnetic bias layer is formed on respective passive end part zones. A ferromagnetic material layer and antiferromagnetic material layer, overlaying the ferromagnetic material layer to come into contact and providing a switched connection magnetic bias field, are included in respective magnetic bias layers. Adjacent joined part 39 having a magnetic and electric continuity with the MR layer 31 are formed with respective magnetic bias layers, and the magnetic bias field in the longitudinal direction is generated in the transducer.

公开(公告)号：JPH07210832A

公开(公告)日：1995-08-11

申请号：JP26941494

申请日：1994-11-02

Applicant: IBM

Inventor： KEBIN ROBAATO KOFUI ,  ROBAATO EDOWAADO FUONTANA ,  JIEEMUSU KENTO HAWAADO ,  TOTSUDO RANIAA HIRUTON ,  MAIKERU ANDORIYUU PAAKAA ,  CHIN FUA TSUAN

IPC: G01R33/09 ,  G11B5/39 ,  H01L43/10

Abstract: PURPOSE: To eliminate the need for an additional structure means for fixing the magnetization direction in a ferromagnetic layer by forming an low-field MR magnetic sensor based on the GMR effect of a multilayered structure. CONSTITUTION: The multilayered magnetic structure 30 includes two layers 31, 33 consisting of a magnetic material. These layers are separated by a nonmagnetic layer 35. The nonmagnetic material layer 35 is an electrically conductive material or a sufficiently thin insulating material layer which enables the conduction of the conduction electrons between the magnetic material layers by a tunnel effect. The magnetic layers 31, 33 consist of ferromagnetic materials, such as NiFe ('Permalloy (R)'), which are Ni, Fe, Co or their alloy. The layers of the magnetic materials and the nonmagnetic materials are alternately formed by sputtering, etc., and the thicknesses of the individual layers are controlled by a quartz monitor, etc. The length of the magnetic structure 30 is several μm and is adequately about