公开(公告)号：JPH07210832A

公开(公告)日：1995-08-11

申请号：JP26941494

申请日：1994-11-02

Applicant: IBM

Inventor： KEBIN ROBAATO KOFUI ,  ROBAATO EDOWAADO FUONTANA ,  JIEEMUSU KENTO HAWAADO ,  TOTSUDO RANIAA HIRUTON ,  MAIKERU ANDORIYUU PAAKAA ,  CHIN FUA TSUAN

IPC: G01R33/09 ,  G11B5/39 ,  H01L43/10

Abstract: PURPOSE: To eliminate the need for an additional structure means for fixing the magnetization direction in a ferromagnetic layer by forming an low-field MR magnetic sensor based on the GMR effect of a multilayered structure. CONSTITUTION: The multilayered magnetic structure 30 includes two layers 31, 33 consisting of a magnetic material. These layers are separated by a nonmagnetic layer 35. The nonmagnetic material layer 35 is an electrically conductive material or a sufficiently thin insulating material layer which enables the conduction of the conduction electrons between the magnetic material layers by a tunnel effect. The magnetic layers 31, 33 consist of ferromagnetic materials, such as NiFe ('Permalloy (R)'), which are Ni, Fe, Co or their alloy. The layers of the magnetic materials and the nonmagnetic materials are alternately formed by sputtering, etc., and the thicknesses of the individual layers are controlled by a quartz monitor, etc. The length of the magnetic structure 30 is several μm and is adequately about

公开(公告)号：JPS5492176A

公开(公告)日：1979-07-21

申请号：JP13464178

申请日：1978-11-02

Applicant: IBM

Inventor： UEIIKAN CHIYU ,  JIEEMUSU KENTO HAWAADO ,  JIEEMUZU FURANSHISU HOWAITO

IPC: H01L29/43 ,  H01L21/28 ,  H01L21/285 ,  H01L21/338 ,  H01L21/768 ,  H01L23/532 ,  H01L29/47 ,  H01L29/872

公开(公告)号：JPS5384464A

公开(公告)日：1978-07-25

申请号：JP14824977

申请日：1977-12-12

Applicant: IBM

Inventor： JIEEMUSU KENTO HAWAADO ,  UIRIAMU DEBITSUDO ROOZENBAAGU ,  JIEEMUSU FURANSHISU HOWAITO

IPC: H01L29/43 ,  H01L21/28 ,  H01L21/285 ,  H01L29/47 ,  H01L29/872

公开(公告)号：JPH0758375A

公开(公告)日：1995-03-03

申请号：JP13465094

申请日：1994-06-16

Applicant: IBM

Inventor： KEBIN ROBAATO KOFUEI ,  JIEEMUSU KENTO HAWAADO ,  TOTSUDO RANIA HIRUTON ,  MAIKERU ANDORIYUU PAAKAA

IPC: C23C14/14 ,  G01R33/09 ,  G11B5/39 ,  H01F10/00 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10

Abstract: PURPOSE: To form a heterofilm where a plurality of ferromagnetic particles are buried in a matrix of nonmagnetic conductive substance by forming a discontinuous layer of ferromagnetic substance on a nonconductive substrate and coating the discontinuous layer with a layer of nonmagnetic conductive substance. CONSTITUTION: A single layer granular magnetoresistive MR film 10 is obtained by coating a nonconductive layer 13 formed on an appropriate substrate 11 with a discontinuous layer of ferromagnetic substance, e.g. NeFe or Co, and forming a ferromagnetic island or granular layer 15 thereon. The ferromagnetic substance layer 15 is formed by deposition or sputtering under ultrahigh vacuum conditions while raising the substrate temperature and mobility sufficient for forming particles of ferromagnetic substance on the layer 13 is attained. Subsequently, a continuous layer 17 of nonmagnetic conductive substance, e.g. Cu or Ag, is formed on the layer of ferromagnetic particles by cooling the substrate thus obtaining a granular MR film 10 where ferromagnetic particles are buried in a nonmagnetic conductive matrix 17.

公开(公告)号：JPH05205243A

公开(公告)日：1993-08-13

申请号：JP23514892

申请日：1992-08-12

Applicant: IBM

Inventor： JIEEMUSU KENTO HAWAADO ,  FUNNCHIYAN WAADO HAN ,  CHIENJIE WAN ,  ANSONII UEI UU

IPC: G11B5/66 ,  G11B5/64 ,  G11B5/73 ,  G11B5/738 ,  G11B5/84 ,  G11B5/85 ,  G11B5/851

Abstract: PURPOSE: To eliminate the need for mechanical surface finishing by forming a film consisting of prescribed components on a disk body and forming a magnetic film thereon. CONSTITUTION: This magnetic recording disk made of a thin-film alloy has a substrate composed of a disk body having the surface coating of a spputter forming film contg. Ni, Cr, (Ni-Cr-O), etc. The production of such disk is executed by forming the film contg. Ni, Cr, (Ni-Cr-O) by sputtering and forming a Co alloy magnetic film by sputtering thereon. A carbon film is formed by sputtering, for the purpose of protective coating thereon. The surface having the desired roughness to eliminate the need for mechanical surface finishing is obtd.

公开(公告)号：JPH0212610A

公开(公告)日：1990-01-17

申请号：JP1009289

申请日：1989-01-20

Applicant: IBM

Inventor： ROBAATO EDOWAADO FUONTANA ,  JIEEMUSU KENTO HAWAADO ,  JIEEMUSU SHIIITANGU RII ,  HARARANBOSU REFUAKISU

IPC: G11B5/39

Abstract: PURPOSE: To make it possible to more meticulously control the resistivity character of a spacer layer by using nichrome or the nichrome added with chromium oxide as the spacer material of a magneto-resistive MR sensor. CONSTITUTION: This converter is provided with the thin-film MR layer 10 formed of a ferromagnetic material and the nonmagnetic thinfilm spacer layer 14 which comes into contact with the MR layer 10. The thin-film spacer layer 14 consists of the material selected from the group consisting of the nichrome and the nichrome contg. the chromium oxide. A soft magnetic material 12 is adhered in contact with the spacer layer 14 in such a manner that this material is arranged in parallel with the MR layer 10 isolatedly form the MR layer 10. The structure is capable of generating a bias in a transverse direction in at least part of the MR layer 10 and linearly maintaining the response of the part to be biased in the transverse direction of the MR layer 10. As a result, the MR sensor 8 including the nonmagnetic spacer layer 14 capable of strictly controlling the resistivity characteristic.

公开(公告)号：JPH01248578A

公开(公告)日：1989-10-04

申请号：JP789389

申请日：1989-01-18

Applicant: IBM

Inventor： JIEEMUSU KENTO HAWAADO ,  MAIKERU FUORUSEN TOUNII ,  CHINGU HAWA TSUANGU

IPC: G11B5/39 ,  H01L43/08

Abstract: PURPOSE: To increase an exchange bias to reduce the temperature dependency of the magnitude of the exchange bias in an MR reading converter by providing the thin magnetoresistance(MR) layer of a ferromagnetic material and the thin layer of an antiferromagnetic material brought into direction contact with the MR layer. CONSTITUTION: An MR sensor 10 has the thin MR 12 of a ferromagnetic material. The thin layer 14 of suitable antiferromagnetic material is adhered to the upper surface of the MR 12 so as to make good boundary atomic contact. It is brought into direction contact with the MR layer 12, and after the layer 14 of a thin antiferromagnetic material is adhered thereto, the laminated structure is heated at a temperature within the range of 260 to 350 deg. for 50 to 20 hours to form a three-dimensional antiferromagnetic material in the boundary surface between the MR layer 12 and the antiferromagnetic material layer 14. Therefore, unidirectional anisotropy grows by the exchange connection of the boundary surface between the MR layer 12 and the antiferromagnetic material layer 14 to generate the shift of the MH loop of the MR layer referred to as a normal longitudinal direction exchange bias magnetic field HUA. A laterail direction bias is generated by a soft magnetic bias layer 16 separated form the MR layer 12 is a thin non magnetic spacer layer 18.