公开(公告)号：JPS6384186A

公开(公告)日：1988-04-14

申请号：JP20534287

申请日：1987-08-20

Applicant: IBM

Inventor： HARDER CHRISTOPH STEFAN ,  JAECKEL HEINZ ,  MEIER HEINZ

IPC: H01S5/00 ,  H01S5/042 ,  H01S5/22 ,  H01S5/223 ,  H01S5/30 ,  H01S5/40

公开(公告)号：JPH0553317B2

公开(公告)日：1993-08-09

申请号：JP20534287

申请日：1987-08-20

Applicant: IBM

Inventor： HARDER CHRISTOPH STEFAN ,  JAECKEL HEINZ ,  MEIER HEINZ

IPC: H01S5/00 ,  H01S5/042 ,  H01S5/22 ,  H01S5/223 ,  H01S5/30 ,  H01S5/40 ,  H01S3/18

公开(公告)号：DE3685755D1

公开(公告)日：1992-07-23

申请号：DE3685755

申请日：1986-09-23

Applicant: IBM

Inventor： HARDER CHRISTOPH STEFAN ,  JAECKEL HEINZ ,  MEIER HEINZ

IPC: H01S5/00 ,  H01S5/042 ,  H01S5/22 ,  H01S5/223 ,  H01S5/30 ,  H01S5/40 ,  H01S3/19 ,  H01S3/23

Abstract: In a transverse junction stripe laser (10), comprising a semiconductor substrate (11) supporting a semiconductor heterostructure of an active layer (13) sandwiched between higher bandgap cladding layers (12, 14), the novelty is that (i) the substrate surface has planar regions and inclined regions of different crystallographic indices; (ii) the active and cladding layers are epitaxially grown with an amphoteric dopant such that the layer sections on the planar regions are of first conductivity type and the layer sections on the inclined regions are of second conductivity type, thus forming one or more junctions (15, 16) in the active layer (13); and (ii) ohmic anode (20, 21) and cathode (22) contacts are provided for applying currents (23, 24) of at least threshold level to the junction(s).

公开(公告)号：DE3685755T2

公开(公告)日：1993-02-04

申请号：DE3685755

申请日：1986-09-23

Applicant: IBM

Inventor： HARDER CHRISTOPH STEFAN ,  JAECKEL HEINZ ,  MEIER HEINZ

IPC: H01S5/00 ,  H01S5/042 ,  H01S5/22 ,  H01S5/223 ,  H01S5/30 ,  H01S5/40 ,  H01S3/19 ,  H01S3/23

Abstract: GaAs/AlGaAs-transverse junction stripe (TJS) laser with p-n junction formation by crystal plane dependent doping. The laser structure (10) consists of a molecular beam expitaxy (MBE)-deposited hetero-structure comprising AlGaAs layers (12,14) with an active GaAs layers (13) sandwiched inbetween. These layers are grown on the patterned surface of a GaAs substrate (11) which provides (100)-plane oriented planar ridges and grooves, the edge being (111A)-plane oriented. p-n homojunctions (15 to 18) are formed in the GaAs layer (13) at the intersections of the (111A) and (100) crystal planes. Ohmic contacts (20,21,22) are provided for applying currents (23,24) of at least the threshold level of the junctions. These novel TJS lasers can be used to form 1- or 2-dimensional arrays of phase-coupled lasers for providing high optical power output.

公开(公告)号：DE3477624D1

公开(公告)日：1989-05-11

申请号：DE3477624

申请日：1984-12-18

Applicant: IBM

Inventor： BAECHTOLD WERNER ,  BARATOFF ALEXIS ,  GUERET PIERRE LEOPOLD ,  HARDER CHRISTOPH STEFAN ,  WOLF HANS PETER

IPC: H01L29/80 ,  H01L29/20 ,  H01L29/205 ,  H01L29/772 ,  H01L29/78 ,  H01L39/22