公开(公告)号：JP2003243401A

公开(公告)日：2003-08-29

申请号：JP2003019203

申请日：2003-01-28

Applicant: IBM

Inventor： DAVIS CHARLES R ,  HAWKEN DAVID L ,  JUNG DAE YOUNG ,  WILLIAM F LANDERS ,  QUESTAD DAVID L

IPC: H01L21/3205 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L23/58

Abstract: PROBLEM TO BE SOLVED: To manufacture a mesh-like reinforcing structure inhibiting peeling and cracking in a multilayer semiconductor structure using a low dielectric constant dielectric material and a copper-based metal wire. SOLUTION: A mesh-like interconnecting structure is provided with electrically conductive pads 45 that are interconnected by electrically conductive lines 37 and 38 at each wiring level, and each electrically conductive pad is connected with the adjacent pad at the next wiring level through a plurality of electrically conductive via holes. The electrically conductive pads, lines and via holes are manufactured in a normal BEOL device wiring level integration process. This mesh-like reinforcing structure can be manufactured in the periphery of the device like a chip or in the empty region of the device requiring a connection for inhibiting peeling. COPYRIGHT: (C)2003,JPO