公开(公告)号：JP2002319674A

公开(公告)日：2002-10-31

申请号：JP2002035743

申请日：2002-02-13

Applicant: IBM

Inventor： BERTIN CLAUDE LOUIS ,  DALLY ANTHONY J ,  FIFIELD JOHN ATKINSON ,  HIGGINS JOHN JESSE ,  MANDELMAN JACK ALLAN ,  TONTI WILLIAM R ,  HEEL NICHOLAS MARTIN VAN

IPC: H01L21/225 ,  H01L21/265 ,  H01L21/28 ,  H01L21/336 ,  H01L21/82 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/51 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor equipped having a dielectric layer of two-dimensional thickness, and to provide a method of manufacturing the same. SOLUTION: This manufacturing method comprises a first process of forming a mask with a through-hole 20 equipped with a side wall 21 on a structure (a), a second process of implanting suppression chemical seeds 24 into the structure through the through-hole 20 so as to form a suppression region 26 in the structure (b), and a third process of enabling a dielectric layer 28 to grow on the structure in the through-hole 20. Here, the suppression region 26 restrains the dielectric layer 28 partially from growing. By this setup, a self-aligned MOSFET or an anti-fuse device having a low overlap capacitance and a low gate induction drain leakage (i.e., low electric field) can be formed.