公开(公告)号：EP1692530A4

公开(公告)日：2011-01-05

申请号：EP03768917

申请日：2003-11-12

Applicant: IBM

Inventor： CLINE CHRISTOPHER W ,  YARMCHUK EDWARD J ,  ARENA VINCENT A ,  MERTE DONALD A ,  PICUNKO THOMAS ,  WOJSZYNSKI BRIAN J ,  HENDRICKS CHARLES J ,  SCAMA MICHAEL E ,  OLYHA JR ROBERT S ,  HALPERIN ARNOLD

IPC: G01R31/06 ,  G01R19/00 ,  G01R31/02 ,  G01R31/28 ,  G01R31/302 ,  G01R31/305 ,  G03G15/00

CPC classification number: G01R31/2805 ,  G01R19/0061 ,  G01R31/302

公开(公告)号：AU2003291513A1

公开(公告)日：2005-06-29

申请号：AU2003291513

申请日：2003-11-12

Applicant: IBM

Inventor： SCAMA MICHAEL E ,  OLYHA JR ROBERT S ,  HALPERIN ARNOLD ,  CLINE CHRISTOPHER W ,  YARMCHUK EDWARD J ,  ARENA VINCENT A ,  MERTE DONALD A ,  PICUNKO THOMAS ,  WOJSZYNSKI BRIAN J ,  HENDRICKS CHARLES J

IPC: G01R19/00 ,  G01R31/02 ,  G01R31/06 ,  G01R31/305 ,  G03G15/00

Abstract: A method and apparatus for the non-contact electrical test of both opens and shorts in electronic substrates. Top surface electrical test features are exposed to an ionization source under ambient conditions and the subsequent charge build up is measured as a drain current by probes contacting corresponding bottom surface features. Opens are detected by an absence of a drain current and shorts are detected by turning off the ionization source and re-measuring the bottom surface probes with a varying bias applied to each probe in the array.

公开(公告)号：CA1219975A

公开(公告)日：1987-03-31

申请号：CA504804

申请日：1986-03-24

Applicant: IBM

Inventor： DESILETS BRIAN H ,  GUNTHER THOMAS A ,  HENDRICKS CHARLES J ,  KELLER JOHN H

IPC: H01L21/302 ,  C23F4/00 ,  H01J37/32 ,  H01L21/3065

Abstract: PLASMA ETCHING REACTOR WITH REDUCED PLASMA POTENTIAL An improved plasma reactor for uniformly etching a large number of semiconductor wafers at a reduced plasma potential includes, in one embodiment, a grounded plate mounted intermediate the cathode and the top plate of a reactor chamber, the top plate and the chamber walls forming the reactor anode. The grounded plate is spaced apart from the chamber top plate a distance sufficient to allow a plasma to be established between the grounded plate and the top plate, and the distance between the grounded plate and the cathode is large enough not to disturb the field in the proximity of the wafers being etched. The plate can be apertured to facilitate etchant gas flow. According to another embodiment of the invention at least two grounded plates are employed, spaced apart from each other and from the upper surface of the reactor plasma chamber.