公开(公告)号：US3689747A

公开(公告)日：1972-09-05

申请号：US3689747D

申请日：1970-12-09

Applicant: IBM

Inventor： MILIA VINCENT DI ,  HALPERIN ARNOLD ,  KOBLENZ MORRIS A

IPC: C23C14/54 ,  G01B7/06 ,  G05D5/03 ,  G01R23/10 ,  H03D13/00

CPC classification number: G05D5/03 ,  C23C14/546 ,  G01B7/066

Abstract: The thickness and rate of evaporation are determined by digitally monitoring the change in frequency effected by the increasing thickness of deposited evaporation on the monitor crystal of the monitor oscillator in the evaporation stream. A preset digital count is loaded into a counter arrangement and the frequency count on the monitor oscillator, taken over a fixed interval of time, is added to the present count to thereby provide a combined count. The combined count is transferred to a storage register and thereafter successive samples of the frequency count on the monitor oscillator are compared to the combined count in the storage register to provide successive difference counts, indicative of evaporation thickness. An updown counter arrangement is employed to determine evaporation rate by first running up the count on the up-down counter, in response to a sample of the frequency count on the monitor oscillator, taken over a fixed interval of time and then, a fixed time thereafter, running down the count on the up-down counter, in response to a sample of the frequency count of the monitor oscillator, taken over the same fixed interval of time used to run the count up.

Abstract translation: 通过数字监测通过蒸发流中监测振荡器的监测晶体上沉积蒸发厚度的增加而影响的频率变化来确定蒸发的厚度和速率。 将预置的数字计数加载到计数器装置中，并将监视振荡器上的固定时间间隔的频率计数添加到当前计数，从而提供组合计数。 组合的计数被传送到存储寄存器，然后将监视振荡器上的频率计数的连续采样与存储寄存器中的组合计数进行比较，以提供指示蒸发厚度的连续差值计数。 采用升降计数器装置，通过首先在升降计数器上运行计数，以响应于监视振荡器上的频率计数的样本在固定的时间间隔内取出来确定蒸发速率，然后， 之后的固定时间，响应于监视振荡器的频率计数的采样，在用于运行计数的相同的固定时间间隔内，递减计数器上的计数。

公开(公告)号：EP1692530A4

公开(公告)日：2011-01-05

申请号：EP03768917

申请日：2003-11-12

Applicant: IBM

Inventor： CLINE CHRISTOPHER W ,  YARMCHUK EDWARD J ,  ARENA VINCENT A ,  MERTE DONALD A ,  PICUNKO THOMAS ,  WOJSZYNSKI BRIAN J ,  HENDRICKS CHARLES J ,  SCAMA MICHAEL E ,  OLYHA JR ROBERT S ,  HALPERIN ARNOLD

IPC: G01R31/06 ,  G01R19/00 ,  G01R31/02 ,  G01R31/28 ,  G01R31/302 ,  G01R31/305 ,  G03G15/00

CPC classification number: G01R31/2805 ,  G01R19/0061 ,  G01R31/302

公开(公告)号：DE69709214D1

公开(公告)日：2002-01-31

申请号：DE69709214

申请日：1997-03-05

Applicant: IBM

Inventor： LI LEPING ,  BARBEE STEVEN G ,  HALPERIN ARNOLD

IPC: H01L21/304 ,  B24B37/04 ,  B24B49/02 ,  G01B7/06 ,  G01N27/00 ,  G01R27/00

Abstract: The apparatus for endpoint detection in removal of a film from a semiconductor wafer, comprises a sensor for creating a signal responsive to the film removal process. A positive feedback amplifier is coupled to the sensor, and has a mode selector. An analyser is coupled to the positive feedback amplifier. The sensor comprises a capacitor and an inductor. The mode selector has a device for selecting operation in frequency mode. A filter is coupled between the positive feedback amplifier and the analyser, and comprises a multi-order filter. The analyser comprises a frequency counter. The mode selector comprises a device for selecting operation in automatic amplitude mode, and automatically selects the gain of the positive feedback amplifier and sensor so that an oscillation is produced when the film is removed from the wafer. The gain selector comprises a device for automatically setting a voltage on a varactor.

公开(公告)号：AU2003291513A1

公开(公告)日：2005-06-29

申请号：AU2003291513

申请日：2003-11-12

Applicant: IBM

Inventor： SCAMA MICHAEL E ,  OLYHA JR ROBERT S ,  HALPERIN ARNOLD ,  CLINE CHRISTOPHER W ,  YARMCHUK EDWARD J ,  ARENA VINCENT A ,  MERTE DONALD A ,  PICUNKO THOMAS ,  WOJSZYNSKI BRIAN J ,  HENDRICKS CHARLES J

IPC: G01R19/00 ,  G01R31/02 ,  G01R31/06 ,  G01R31/305 ,  G03G15/00

Abstract: A method and apparatus for the non-contact electrical test of both opens and shorts in electronic substrates. Top surface electrical test features are exposed to an ionization source under ambient conditions and the subsequent charge build up is measured as a drain current by probes contacting corresponding bottom surface features. Opens are detected by an absence of a drain current and shorts are detected by turning off the ionization source and re-measuring the bottom surface probes with a varying bias applied to each probe in the array.

公开(公告)号：DE69709214T2

公开(公告)日：2002-08-22

申请号：DE69709214

申请日：1997-03-05

Applicant: IBM

Inventor： LI LEPING ,  BARBEE STEVEN G ,  HALPERIN ARNOLD

IPC: H01L21/304 ,  B24B37/04 ,  B24B49/02 ,  G01B7/06 ,  G01N27/00 ,  G01R27/00

Abstract: The apparatus for endpoint detection in removal of a film from a semiconductor wafer, comprises a sensor for creating a signal responsive to the film removal process. A positive feedback amplifier is coupled to the sensor, and has a mode selector. An analyser is coupled to the positive feedback amplifier. The sensor comprises a capacitor and an inductor. The mode selector has a device for selecting operation in frequency mode. A filter is coupled between the positive feedback amplifier and the analyser, and comprises a multi-order filter. The analyser comprises a frequency counter. The mode selector comprises a device for selecting operation in automatic amplitude mode, and automatically selects the gain of the positive feedback amplifier and sensor so that an oscillation is produced when the film is removed from the wafer. The gain selector comprises a device for automatically setting a voltage on a varactor.

公开(公告)号：DE3360758D1

公开(公告)日：1985-10-17

申请号：DE3360758

申请日：1983-03-15

Applicant: IBM

Inventor： DI STEFANO THOMAS HERMAN ,  HALPERIN ARNOLD

IPC: G01R31/02 ,  G01N27/20 ,  G01R31/28 ,  G01R27/02

Abstract: The Figure shows a system for non-destructive detection of current restricting defects, such as cracks, narrowing, intermittent opens etc, in a conductor, e.g. a printed conductor. A composite test signal is applied to the test conductor 3 via probes 1 and 2. The signal is produced by a generator circuit 4 comprising a frequency (f0) oscillator 5, amplifier 6 and D.C. source 7. The defects in the conductor 3 cause its resistance to vary at the same frequency as the oscillator signal and cause current variations through the conductor. The signal at node 4A comprises a component Vf0 at frequency f0, a component 2f0GV at twice the frequency f0 due to the resistive variation of the restricting defect and a component 2f0CV at two the frequency f0 due to the resistance heating of the whole conductor, The f0 component is rejected by filter 8 and the 2f0 components amplified (9) and filtered by band pass filter 10. The amplified filtered signal is supplied as one input to a phase detector 12, the other input being derived from node 40, frequency doubler 14, band pass filter 15 and phase shifter 16. The detector 12 operates as a phase, sensitive demodulator to suppress the 2f0CV component and to compare the phase of the 2f0GV component with the 2f0 component from phase shifter 16. The result of the comparison is manifested as a DC voltage which is logarithmically amplified and applied to indicator meter 18 and, via threshold detector 19, to defect indicator 20.