公开(公告)号：WO0203457A2

公开(公告)日：2002-01-10

申请号：PCT/US0121161

申请日：2001-07-02

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： BRASE GABRIELA ,  SCHROEDER UWE PAUL ,  HOLLOWAY KAREN LYNNE

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L21/76808 ,  H01L23/5283 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An interconnection pattern is formed over the surface of a silicon wafer in which both the vias and the trenches of the pattern are filled with copper. The process of filling the vias and trenches involves use of a silicon nitride film as an etch stop and the filling of the vias with an anti-reflection coating.

Abstract translation: 在硅晶片的表面上形成互连图案，其中图案的通孔和沟槽均填充有铜。 填充通孔和沟槽的过程涉及使用氮化硅膜作为蚀刻停止件并且用防反射涂层填充通孔。

公开(公告)号：DE3376889D1

公开(公告)日：1988-07-07

申请号：DE3376889

申请日：1983-06-10

Applicant: IBM

Inventor： BLUM SAMUEL EMIL ,  HOLLOWAY KAREN LYNNE ,  SRINIVASAN RANGASWAMY

IPC: H01L21/302 ,  C08J7/00 ,  G03F7/039 ,  H01L21/027 ,  H01L21/28 ,  H01L21/768 ,  H01L23/522 ,  G03F7/10