公开(公告)号：JPS6286829A

公开(公告)日：1987-04-21

申请号：JP18438886

申请日：1986-08-07

Applicant: IBM

Inventor： BLUM SAMUEL EMIL

IPC: H01L21/31 ,  H01L21/316

公开(公告)号：DE3687732T2

公开(公告)日：1993-08-19

申请号：DE3687732

申请日：1986-09-30

Applicant: IBM

Inventor： BLUM SAMUEL EMIL

IPC: H01L21/31 ,  H01L21/316 ,  H01L21/383 ,  C30B31/10

Abstract: A high purity oxide layer is produced on a semiconductor substrate (8) by heating the substrate in the presence of an oxidising ambient in a multi-walled reaction chamber (1) provided with a heating element (12). Simultaneously a halogen-containing ambient is caused to flow through an outer portion (10) of the reaction chamber. A gaseous ambient is caused to flow through an intermediate portion (9) of the reaction chamber to remove water by-product from the reaction with the halogen which occurs in the outer portion (10) of the reaction chamber.

公开(公告)号：AU598135B2

公开(公告)日：1990-06-14

申请号：AU1761588

申请日：1988-06-10

Applicant: IBM

Inventor： BLUM SAMUEL EMIL ,  SRINIVASAN RANGASWAMY ,  WYNNE JAMES JEFFREY

IPC: A61B17/00 ,  A61B18/20 ,  A61B18/26 ,  A61C1/00 ,  A61C17/00 ,  A61F9/008 ,  A61N5/06 ,  A61C15/00 ,  A61B17/32 ,  A61C3/00

公开(公告)号：DE3060612D1

公开(公告)日：1982-08-19

申请号：DE3060612

申请日：1980-03-27

Applicant: IBM

Inventor： BLUM SAMUEL EMIL ,  KOVAC ZLATA ,  VON GUTFELD ROBERT JACOB

IPC: B23K26/34 ,  C23C18/16 ,  C23C18/31 ,  H05K3/18 ,  H05K3/22 ,  C23C3/00 ,  B23K26/00

Abstract: A method for high resolution maskless electroless plating is described. Preferential plating results from exposing those regions where plating is sought to an energy beam to increase the plating rate by a factor of 103 to 104. This enhancement is sufficient to make masking unnecessary.

公开(公告)号：DE3687732D1

公开(公告)日：1993-03-25

申请号：DE3687732

申请日：1986-09-30

Applicant: IBM

Inventor： BLUM SAMUEL EMIL

IPC: H01L21/31 ,  H01L21/316 ,  H01L21/383 ,  C30B31/10

Abstract: A high purity oxide layer is produced on a semiconductor substrate (8) by heating the substrate in the presence of an oxidising ambient in a multi-walled reaction chamber (1) provided with a heating element (12). Simultaneously a halogen-containing ambient is caused to flow through an outer portion (10) of the reaction chamber. A gaseous ambient is caused to flow through an intermediate portion (9) of the reaction chamber to remove water by-product from the reaction with the halogen which occurs in the outer portion (10) of the reaction chamber.

公开(公告)号：AU570225B2

公开(公告)日：1988-03-10

申请号：AU2165583

申请日：1983-11-24

Applicant: IBM

Inventor： BLUM SAMUEL EMIL ,  SRINIVASAN RANGASWAMY ,  WYNNE JAMES JEFFREY

IPC: A61B17/00 ,  A61B18/20 ,  A61B18/26 ,  A61C1/00 ,  A61C17/00 ,  A61F9/008 ,  A61N5/06 ,  A61B17/32 ,  A61B17/36 ,  A61C3/00 ,  A61C15/00

公开(公告)号：DE3373055D1

公开(公告)日：1987-09-24

申请号：DE3373055

申请日：1983-09-06

Applicant: IBM

Inventor： BLUM SAMUEL EMIL ,  SRINIVASAN RANGASWAMY ,  WYNNE JAMES JEFFREY

IPC: A61B17/00 ,  A61B18/20 ,  A61B18/26 ,  A61C1/00 ,  A61C17/00 ,  A61F9/008 ,  A61N5/06 ,  A61B17/36

公开(公告)号：AT28974T

公开(公告)日：1987-09-15

申请号：AT83108760

申请日：1983-09-06

Applicant: IBM

Inventor： BLUM SAMUEL EMIL ,  SRINIVASAN RANGASWAMY ,  WYNNE JAMES JEFFREY

IPC: A61B17/00 ,  A61B18/20 ,  A61B18/26 ,  A61C1/00 ,  A61C17/00 ,  A61F9/008 ,  A61N5/06 ,  A61B17/36

公开(公告)号：AU2165583A

公开(公告)日：1984-06-07

申请号：AU2165583

申请日：1983-11-24

Applicant: IBM

Inventor： BLUM SAMUEL EMIL ,  SRINIVASAN RANGASWAMY ,  WYNNE JAMES JEFFREY

IPC: A61B17/00 ,  A61B18/20 ,  A61B18/26 ,  A61C1/00 ,  A61C17/00 ,  A61F9/008 ,  A61N5/06 ,  A61B17/32 ,  A61B17/36 ,  A61C3/00 ,  A61C15/00

公开(公告)号：DE3376889D1

公开(公告)日：1988-07-07

申请号：DE3376889

申请日：1983-06-10

Applicant: IBM

Inventor： BLUM SAMUEL EMIL ,  HOLLOWAY KAREN LYNNE ,  SRINIVASAN RANGASWAMY

IPC: H01L21/302 ,  C08J7/00 ,  G03F7/039 ,  H01L21/027 ,  H01L21/28 ,  H01L21/768 ,  H01L23/522 ,  G03F7/10