公开(公告)号：JPH1174197A

公开(公告)日：1999-03-16

申请号：JP19292198

申请日：1998-07-08

Applicant: IBM

Inventor： JAMES A BRUCE ,  STEPHEN J HORMES ,  LEIDY ROBERT K ,  MLYNKO WALTER E ,  EDWARD W SENGL

IPC: G03F7/004 ,  G03F1/00 ,  G03F7/095 ,  G03F7/20 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/76 ,  H01L21/762

Abstract: PROBLEM TO BE SOLVED: To enable regions to be demarcated through a single masking step by a method, wherein a hybrid resist is irradiated with an actinic radiation energy to expose a first region on a mask, and a second region is exposed on the mask by uniform exposure. SOLUTION: An oxide layer and a nitride layer are formed on a wafer, and a hybrid resist layer is attached, exposed to light through a mask, and developed to form a space (302 to 308). The nitride layer is etched through the space (310), uniform exposure and development are carried out (312), and silicon is etched to the hybrid resist and the nitride layer to form an STI region (314). Then, the exposed nitride and the oxide are removed, a silicon dioxide layer is attached to an unblocked silicon, the nitride is etched (316 to 322), a nitride spacer is formed in an edge STI region, silicon dioxide is attached, a wafer is planarized and the residual nitride and the oxide are removed (324 to 330).