公开(公告)号：JP2000228405A

公开(公告)日：2000-08-15

申请号：JP2000023868

申请日：2000-02-01

Applicant: IBM

Inventor： ARNE W BALLANTINE ,  DOUGLAS D KUURUBOU ,  JEFFREY GILBERT ,  JOSEPH R GRECO ,  GLENN R MILLER

IPC: H01L29/73 ,  H01L21/314 ,  H01L21/318 ,  H01L21/328 ,  H01L21/331 ,  H01L29/08

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming, at least, one interface region between two semiconductor material regions. SOLUTION: Dielectric regions 9 are partially formed at an interface 5 between a single crystal silicon 1 and a polycrystalline silicon 3. The dielectric regions 9 are formed by injecting nitrogen atoms into the single crystal silicon 1. The formed dielectric regions 9 have thickness of 1 to 10 Å. A dielectric layer is provided at an interface between two silicons by the use of nitrogen, by which each wafer can be controlled in electric resistance at an interface. In an NPN transistor, a dielectric layer is formed between an emitter and a contact, by which a base current and a current gain β can be controlled.