公开(公告)号：JP2000228405A

公开(公告)日：2000-08-15

申请号：JP2000023868

申请日：2000-02-01

Applicant: IBM

Inventor： ARNE W BALLANTINE ,  DOUGLAS D KUURUBOU ,  JEFFREY GILBERT ,  JOSEPH R GRECO ,  GLENN R MILLER

IPC: H01L29/73 ,  H01L21/314 ,  H01L21/318 ,  H01L21/328 ,  H01L21/331 ,  H01L29/08

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming, at least, one interface region between two semiconductor material regions. SOLUTION: Dielectric regions 9 are partially formed at an interface 5 between a single crystal silicon 1 and a polycrystalline silicon 3. The dielectric regions 9 are formed by injecting nitrogen atoms into the single crystal silicon 1. The formed dielectric regions 9 have thickness of 1 to 10 Å. A dielectric layer is provided at an interface between two silicons by the use of nitrogen, by which each wafer can be controlled in electric resistance at an interface. In an NPN transistor, a dielectric layer is formed between an emitter and a contact, by which a base current and a current gain β can be controlled.

公开(公告)号：JP2001319888A

公开(公告)日：2001-11-16

申请号：JP2001095081

申请日：2001-03-29

Applicant: IBM

Inventor： BALLANTINE ARNE W ,  ELLIS-MONAGHAN JOHN J ,  FURUKAWA TOSHIHARU ,  GLENN R MILLER ,  SLINKMAN JAMES A ,  GILBERT JEFFREY D

IPC: H01L21/22 ,  C21D1/04 ,  H01L21/225 ,  H01L21/26 ,  H01L21/265 ,  H01L21/324 ,  H01L21/326

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a desired junction profile in a semiconductor device. SOLUTION: At least one dopant is thrown into a semiconductor substrate. At the same time, the semiconductor substrate and at least one dopant are annealed exposing the semiconductor substrate to an electric field thus diffusing at least one dopant into the semiconductor substrate.

公开(公告)号：MY126811A

公开(公告)日：2006-10-31

申请号：MYPI20011417

申请日：2001-03-27

Applicant: IBM

Inventor： JOHN J ELLIS-MONAGHAN ,  TOSHIHARU FURUKAWA ,  ARNE W BALLANTINE ,  GLENN R MILLER ,  JAMES A SLINKMAN ,  JEFFREY D GILBERT

IPC: H01L21/04 ,  H01L21/22 ,  H01L21/225 ,  H01L21/265 ,  H01L21/324 ,  H01L21/326

Abstract: A METHOD FOR FORMING A DESIRED JUNCTION PROFILE IN A SEMICONDUCTOR DEVICE . AT LEAST DOPANT IS INTRODUCED INTO A SEMICONDUCTOR SUBSRATE. THE AT LEAST ONE DOPANT IS DIFFUSED IN THE SEMICONDUCTOR SUBSTRATE THROUGH ANNEALING THE SEMICONDUCTOR SUBSTRATE AND THE AT LEAST ONE DOPANT WHILE SIMULTANEOUSLY EXPOSING THE SEMICONDUCTOR SUBSTRATE TO AN ELECTIC FIELD. (FIG. 5)

公开(公告)号：SG100658A1

公开(公告)日：2003-12-26

申请号：SG200101933

申请日：2001-03-26

Applicant: IBM

Inventor： ARNE W BALLANTINE ,  JOHN J ELLIS-MONAGHAN ,  TOSHIHARU FURUKAWA ,  GLENN R MILLER ,  JAMES ALBERT SLINKMAN ,  JEFFERY D GILBERT

IPC: H01L21/22 ,  C21D1/04 ,  H01L21/225 ,  H01L21/26 ,  H01L21/265 ,  H01L21/324 ,  H01L21/326 ,  H01L21/00

Abstract: A method for forming a desired junction profile in a semiconductor device. At least one dopant is introduced into a semiconductor substrate. The at least one dopant is diffused in the semiconductor substrate through annealing the semiconductor substrate and the at least one dopant while simultaneously exposing the semiconductor substrate to an electric field.