公开(公告)号：JPH06310447A

公开(公告)日：1994-11-04

申请号：JP2529194

申请日：1994-02-23

Applicant: IBM

Inventor： TEINA JIEEN KOTSUTSURAA ,  JIYON KAATO FUOOSUTAA ,  ROORENSU ANDORIYUU ROTSUPU ,  YOSHI SHIN

IPC: C30B25/12 ,  C23C16/52 ,  H01J37/32 ,  H01L21/205 ,  H01L21/31

Abstract: PURPOSE: To monitor the spacing between electrode plates in a semiconductor wafer reaction chamber, without entering this chamber by handling as a parallel plate capacitor parallel electrode plates disposed in a plasma enhanced chemical vapor deposition chamber. CONSTITUTION: In a semiconductor wafer reaction chamber 11 of a plasma enhanced chemical vapor deposition chamber a pair of electrode plates 16, 17 are disposed and used as capacitor electrodes. A capacitance meter 14 is connected between these plates 16, 17 through connection wires 12, 13 to measure the capacitance C between them. According to a preset calibration curve, it is converted into the spacing between the electrode plates 16, 17, as the capacitance between the two parallel electrode plates 16, 11 is inversely proportional to their spacing. Thus the spacing between the electrode plates in the semiconductor wafer reaction chamber can be monitored, without entering this chamber.

公开(公告)号：JPH08339897A

公开(公告)日：1996-12-24

申请号：JP12841396

申请日：1996-05-23

Applicant: IBM

Inventor： JIYON HOWAADO KERAA ,  MITSUCHIERU SUKOTSUTO BAANESU ,  JIYON KAATO FUOOSUTAA ,  JIYON EDOWAADO HAIDENRAIHI SAA

IPC: H05H1/46 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To provide a device for generating induced plasma, having improved RF coil structure for inductive coupling plasma in an integrated circuit production process. SOLUTION: An RF coil 2 effective for inductive coupling plasma performs capacitive coupling or inductive coupling of plasma. Coils 3, 4 have layer structure, and have at least one RF coil 3, a dielectric layer 5 having low dielectric constant, and a second RF magnetic structure 4. The second magnetic structure 4 may be a second RF coil or a Faraday shield. In the two coil structures, the first RF coil 3 has first magnetic direction excited with an RF source 1, and the second RF coil 4 has a second magnetic direction opposite to the first magnetic direction. The RF source 1 is connected to the end of high voltage of the two RF coils. Uniform capacitive coupling is achieved with the Faraday shield arranged between the RF coil 2 and plasma.

公开(公告)号：JPH07296992A

公开(公告)日：1995-11-10

申请号：JP10191693

申请日：1993-04-05

Applicant: IBM

Inventor： MAIKERU SUKOTSUTO BAANESU ,  DENISU KIISU KOURUTASU ,  JIYON KAATO FUOOSUTAA ,  JIYON EICHI KERAA

IPC: H05H1/46 ,  B01J19/08 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01P7/00

Abstract: PURPOSE: To increase source efficiency and plasma density by supplying high-frequency power to a first tap of a high-frequency helical coil and connecting a variable capacitor between a second tap and a grounding shield. CONSTITUTION: A gas inflow 13 passing gas forming a plasma is at an upper end of a gas discharge tube 12, and an electrode 14 for supporting a semiconductor wafer is at a terminal of the discharge tube 12. One end of a high-frequency helical coil 11 is connected to a grounding shield 15, and one end of the coil 11 is grounded. A tap 16 of the coil 11 is connected to a first RF power supply 17, the electrode 14 is connected to a second RF power supply 18, and a variable capacitor 19 is connected between a non-grounding end of the coil 11 and the shield 15. Since a high-frequency power supply is employed, the number of windings of the coil 11 is reduced, and an inductance is lowered. When a plasma is in ON state, a resistor load increases, and further the capacitor 19 can be adjusted, a system resonated with an operating frequency can be synchronized.

公开(公告)号：JPH05299493A

公开(公告)日：1993-11-12

申请号：JP26093692

申请日：1992-09-30

Applicant: IBM

Inventor： MAIKERU SUKOTSUTO BAANZU ,  DENISU KIISU KOURUTASU ,  JIYON KAATO FUOOSUTAA ,  JIYON HAWAADO KERAA

IPC: B23Q3/15 ,  H01L21/683 ,  H02N13/00 ,  H01L21/68

Abstract: PURPOSE: To obtain a chuck which is operable in a wide temp. and pressure ranges, economically manufacturable and usable, even in a one- or two-polar potential mode by making it from mutually welded laminate boards and providing a plurality of openings which form passages for liq. coolant which extend to the top face. CONSTITUTION: Laminated boards 15, 16 are mutually welded to form a support 12. One of the laminated boards 16 has a backside metal electrode pattern 22 for generating an electrostatic power which holds a semiconductor wafer on a top face 14. The other laminated board 15 has a backside metal electrode pattern 24 to be connected to a power source on the outer surface of the support 12. Vias 26 are provided for electrically connecting the pattern 22, formed in the laminated board 16, to the pattern 24. Openings 18 are provided for forming passages for liq. coolant, which are formed in the laminate boards 16 and positioned in the support 12 and extend from the outer surface of the support 12 to the top face 14.

公开(公告)号：JPH05217950A

公开(公告)日：1993-08-27

申请号：JP22608692

申请日：1992-08-25

Applicant: IBM

Inventor： MAIKERU SUKOTSUTO BAANZU ,  DENISU KIISU KUURUTASU ,  JIYON KAATO FUOOSUTAA ,  JIYON HAWAADO KERAA ,  JIEEMUZU ANSONII ONIIRU

IPC: C23C14/00 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31

Abstract: PURPOSE: To provide an equipment and method for plasma treatment, including the gettering of particles of a high charge/mass ratio from a semiconductor wafer. CONSTITUTION: In a first mode, magnetic fields 27, 29 which cross an electric field E are generated using magnets 15, 17 to extract negative particles from a wafer 1, and thereby a sheath which could trap particles is prevented from being formed. In a second case, a power supply is connected to a wafer electrode to keep negative charges on the wafer, and thereby negative particles are prevented from being attracted to the surface of the wafer, when plasma is turned off. In another case, using a source of low density plasma, a large plasma sheath for allowing particles to cross a chamber and be gettered is generated. With low density plasma discharging and a high density pulse that follows the low density plasma, a negative effect of an insulating layer between the wafer and the wafer electrode is eliminated.

公开(公告)号：JPH04306598A

公开(公告)日：1992-10-29

申请号：JP19518991

申请日：1991-08-05

Applicant: IBM

Inventor： JIYON KAATO FUOOSUTAA ,  UIRIAMU MAACHIN HORUBAA ,  JIYOSEFU SUKINAA ROOGAN

IPC: B01J19/08 ,  C23C14/35 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46

Abstract: PURPOSE: To unify the time average ion density in the cross sectional direction of an ion bundle arriving at a substrate. CONSTITUTION: One or both of the intensity of the magnetic field generated by coils 24-28 and the frequency of the electromagnetic wave generated by a microwave source 40 and passing along the axis are changed under the control of a micro-processor 38, and the locus of the cyclotron resonance is scanned in the direction separating from the axis of the magnetic field and in the direction approaching it.