公开(公告)号：JPH05109876A

公开(公告)日：1993-04-30

申请号：JP8076092

申请日：1992-04-02

Applicant: IBM

Inventor： JIYOSEFU SUKINAA ROOGAN ,  REIMONDO ROBAATO RATSUKERU ,  ROBAATO ERI TONPUKINSU ,  ROBAATO PIITAA UESUTAAFUIIRUDO

IPC: B23Q3/15 ,  B23Q11/14 ,  H01L21/683 ,  H02N13/00

Abstract: PURPOSE: To provide an electrostatic chuck which may be used in a widely changing thermal cycle. CONSTITUTION: An electrostatic chuck 40 is constituted from top to bottom, an isolating layer 42, an electrostatic pattern layer 44 including a conductive electrostatic pattern 46 arranged on a substrate 45, a heating layer 50 including a conductive heating pattern 54 arranged on a substrate 52, and a heat sink stage 70 in which a cooling channel 78 and a temperature control chamber 80 are provided.

公开(公告)号：JPS6226821A

公开(公告)日：1987-02-04

申请号：JP14040186

申请日：1986-06-18

Applicant: IBM

Inventor： BURUUSU BANBURU ,  JIEROOMU JIYON KUOMO ,  JIYOSEFU SUKINAA ROOGAN ,  SUCHIIBUN MAAKU ROSUNAGERU

IPC: H05K3/08 ,  C23C14/34 ,  C23F1/04 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065

公开(公告)号：JPH07201959A

公开(公告)日：1995-08-04

申请号：JP23149094

申请日：1994-09-27

Applicant: IBM

Inventor： MAIKERU SUKOTSUTO BAANZU ,  JIYON HAWAADO KERAA ,  JIYOSEFU SUKINAA ROOGAN ,  ROBAATO IIRAI TOMUKIN ,  ROBAATO PIITAA UESUTOFUIIRUDO

IPC: B23Q3/15 ,  H01L21/68 ,  H01L21/683 ,  H02N13/00

Abstract: PURPOSE: To suppress the formation of vacuum arcs between the back of a wafer in the middle of a process and an electrostatic chuck main body by laying a conductive protection circle floating near self-bias potential, introduced by plasma on the wafer. CONSTITUTION: A circular path 515 extends to the periphery of the outer part of a top face in an electrode 200 and forms a gas supply groove. A protective film 300 facing downward has a thin conductive member 265 having the top face which is flush with the top face 210 of a grasping electrode. A base part 260 is insulated form the electrode 200, and it floats by coupling capacity to a potential approximated to the wafer potential. A wafer 600 is brought into contact with plasma, and therefore it is in self-bias potential which is much lower than the time-averaged plasma potential. Namely, the time-averaged potential on the wafer is typically much smaller than ground potential. Thus, the protective film establishes an equipotential region, which is equal to the potential of a work piece between the work piece and an outer electrode.

公开(公告)号：JPH0681144A

公开(公告)日：1994-03-22

申请号：JP4443793

申请日：1993-02-10

Applicant: IBM

Inventor： HENRII JIYON GURABAATSU ,  ARUFURETSUDO GURIRU ,  UIRIAMU MAATEIN HORUBAA ,  JIYOSEFU SUKINAA ROOGAN ,  JIEIMUSU TEIENNCHIEN YAA

IPC: C23C14/34 ,  C23C14/04 ,  C23C14/32 ,  C23C14/35 ,  H01J37/32 ,  H01L21/285 ,  H01L21/768 ,  H05H1/18

公开(公告)号：JPH07201960A

公开(公告)日：1995-08-04

申请号：JP23153394

申请日：1994-09-27

Applicant: IBM

Inventor： MAIKERU SUKOTSUTO BAANZU ,  JIYON HAWAADO KERAA ,  JIYOSEFU SUKINAA ROOGAN ,  ROBAATO IIRAI TOMUKIN ,  ROBAATO PIITAA UESUTOFUIIRUDO

IPC: B23Q3/15 ,  H01L21/683 ,  H02N13/00 ,  H01L21/68

Abstract: PURPOSE: To suppress the formation of vacuum arcs between the back of a wafer in the middle of a process and an electrostatic chuck and to improve insulating destruction resistance by biasing an electrode on self-bias potential, introduced by plasma on the wafer and laying a conductive protection circle in self-bias potential. CONSTITUTION: A wafer 600 is brought into contact with plasma and is at self-bias potential Vsb which is much lower than plasma potential at time average, and two electrodes 100 and 200 of the chuck are biased in prescribed potentials above and below Vsb . A conductive circle 300, which is arranged downward and whose top face is almost flush with the top face of a grasping electrode has one or plural holes making a conductive element 310 that is brought into contact with plasma pass through and it gives reference for self- bias potential. Thus, the two electrodes on characteristic reference potential are maintained for respective bias potentials.

公开(公告)号：JPH04306598A

公开(公告)日：1992-10-29

申请号：JP19518991

申请日：1991-08-05

Applicant: IBM

Inventor： JIYON KAATO FUOOSUTAA ,  UIRIAMU MAACHIN HORUBAA ,  JIYOSEFU SUKINAA ROOGAN

IPC: B01J19/08 ,  C23C14/35 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46

Abstract: PURPOSE: To unify the time average ion density in the cross sectional direction of an ion bundle arriving at a substrate. CONSTITUTION: One or both of the intensity of the magnetic field generated by coils 24-28 and the frequency of the electromagnetic wave generated by a microwave source 40 and passing along the axis are changed under the control of a micro-processor 38, and the locus of the cyclotron resonance is scanned in the direction separating from the axis of the magnetic field and in the direction approaching it.

公开(公告)号：JPS57173957A

公开(公告)日：1982-10-26

申请号：JP2220282

申请日：1982-02-16

Applicant: IBM

Inventor： KURAUSU DEIITORITSUHI BEIYAA ,  JIYOSEFU SUKINAA ROOGAN

IPC: H01L29/73 ,  H01L21/033 ,  H01L21/205 ,  H01L21/265 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/331 ,  H01L21/76 ,  H01L21/762 ,  H01L29/732

公开(公告)号：JPH07201962A

公开(公告)日：1995-08-04

申请号：JP26648694

申请日：1994-10-31

Applicant: IBM

Inventor： MAIKERU SUKOTSUTO BAANZU ,  JIYON HAWAADO KERAA ,  JIYOSEFU SUKINAA ROOGAN ,  REIMONDO ROBAATO RATSUKERU ,  ROBAATO IIRAI TOMUKIN ,  ROBAATO PIITAA UESUTOFUIIRUDO

IPC: B23Q3/15 ,  H01L21/00 ,  H01L21/683 ,  H02N13/00 ,  H01L21/68

Abstract: PURPOSE: To obtain superior insulating characteristic, to obtain a flat clamp surface, and to form a high clamp force for a work piece by machining an element part, forming an anode oxidized insulating surface, and operating assembly by using a mount. CONSTITUTION: The outer diameter size of electrodes 100 and 200 is rough machined, the recessed parts are finished by machining, and the vertical surface and the bottom part of the electrode 100 are finished by machining. Then, oxidized surface layers 102 and 202 are formed on the electrodes 100 and 200, and they are mounted to a mount 400. A step difference is formed between a surface 410 corresponding to a top face 110 of the circular electrode 100 and a surface 420 corresponding to a top face 220 of the base electrode 200, and a clamp force is affected by this step difference. When the step difference between the surfaces 110 and 220 is 0.00508 mm, it is allowable. Therefore, superior insulating characteristic is obtained, a flat clamp surface is obtained, and a clamp force for a workpiece can be increased.

公开(公告)号：JPH06342843A

公开(公告)日：1994-12-13

申请号：JP16241291

申请日：1991-06-07

Applicant: IBM

Inventor： JIYOSEFU SUKINAA ROOGAN ,  REIMONDO ROBAATO RUKERU ,  ROBAATO ERI TONPUKINSU ,  ROBAATO PIITAA UESUTAAFUIIRUDO

IPC: B23Q3/15 ,  H01L21/265 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00 ,  H01L21/68

Abstract: PURPOSE: To enable clamping force of an electrostatic chuck for an attraction between the chuck and a wafer to be improved in strength and uniformity by a method, wherein the electrostatic chuck is equipped with an electrode composed of two separated parts. CONSTITUTION: A chuck 10 has a hub 12a and a rim 12b, and the hub 12a and the rim 12b are formed in one piece and electrically connected together but insulated from a doughnut-shaped electrode 14 which is located at the center of the chuck 10. The clamping source of the chuck 10 is formed as a disk of radius R and divided into three ring-shaped regions. The ring-shaped regions are separated by boundaries, a wall 16 and an outer edge 24. The wall 16 is located at a position distant from the center by R/4, and the outer edge 24 is located at a position distant from the center by 3R/4. The clamping surface is possessed of two electrodes 12 and 14, which are isolated from each other and equal in area, and the clamping surface area of the electrodes 12 and 14 are represented by a formula, (πR )/2. Furthermore, the two separate clamping surfaces are symmetrically distributed in area, so that a clamping force which is uniform and strong can be obtained.

公开(公告)号：JPH03242843A

公开(公告)日：1991-10-29

申请号：JP32342990

申请日：1990-11-28

Applicant: IBM

Inventor： KURISUTOFUA BINSENTO JIYONISU ,  FURECHIYAA JIYONZU ,  JIYOSEFU SUKINAA ROOGAN ,  MAIKERU AREN RUUZATSUKU

IPC: G11B11/10 ,  G11B11/105

Abstract: PURPOSE: To make it possible to obtain a magneto-optical memory medium improved in a signal-to-noise ratio and environmental stability by incorporating specific synthetic oxide glass into dielectric layers. CONSTITUTION: This magnet optical memory medium is formed by laminating a first plastic layer 12, the first dielectric layer 14, a magneto-optical material thin-film layer 16, the second dielectric layer 18 and a protective layer 20 on a substrate 10. The dielectric layers 14, 18 contain the synthetic oxide glass. The glass has the chemical formulas SiO2 -MO3 or SiO2 -MO3 O3 and SiO2 -MO3 O5 . M is selected from Zr, Ti, Al, Nb, Y, Sn, In, Ta or Sb and more particularly M is preferably Ti, Zr or Al. As a result, the signal-to-noise ratio and environmental stability are improved.