公开(公告)号：JPH01171225A

公开(公告)日：1989-07-06

申请号：JP25222188

申请日：1988-10-07

Applicant: IBM

Inventor： JIYON HAWAADO KERAA ,  GARII SUCHIYUWAATO SERUUIN ,  JIYOISHII SUINGU

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3065

Abstract: PURPOSE: To emit secondary electrons in a plasma by properly adjusting an photoelectronic effect according to the work function of a material in etching, generating photoelectrons with low kinetic energy, accelerating the photoelectrons with the low kinetic energy by using an accelerator, and converting them into photoelectrons with high energy. CONSTITUTION: When a metallic small area is exposed in an etching process, those exposed metallic areas emit photoelectrons with 0.6 or 0.8eV energy according to the exact values of the wavelength of a light and the work function of the material. The generated photoelectrons with low kinetic energy are emitted to a cathode sheath voltage arranged in the neighborhood of a cathode electrode 12. Therefore, those emitted photoelectrons with the low kinetic energy are accelerated by a strong potential in the cathode sheath. The photoelectrons are accelerated across the sheath, made close to the sheath potential in a 100-1KeV range by obtaining the extremely high kinetic energy from the electrostatic mutual action of the electrons and the sheath electric field. Therefore, those low kinetic photoelectrons are converted into the high energy electrons, and accelerated between electrodes 12 and 16, and turned into plasma.

公开(公告)号：JPS5480673A

公开(公告)日：1979-06-27

申请号：JP12695278

申请日：1978-10-17

Applicant: IBM

Inventor： JIYON HAWAADO KERAA ,  CHIYAARUZU MIKAERU MATSUKENNA ,  JIEEMUZU ROBAATO UINAADO

IPC: H01L21/268 ,  C30B23/04 ,  C30B23/08 ,  H01J37/30 ,  H01J37/317 ,  H01L21/20 ,  H01L21/203

公开(公告)号：JPH09219398A

公开(公告)日：1997-08-19

申请号：JP1550697

申请日：1997-01-29

Applicant: IBM

Inventor： JIYON HAWAADO KERAA

IPC: C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46

Abstract: PROBLEM TO BE SOLVED: To generate uniform negative ion plasma by generating a plurality of thermal plasmas with a magnetic field disposed near a magnetic field zero, and diffusing the plasma from the thermal plasma through the magnetic field. SOLUTION: The negative ion induction source for etching a high aspect ratio structure comprises a workpiece chuck 34 in a plasma region, and an RF source connected to a workpiece holder to give directional energy equal to at least 10% of maximum positive ion energy to the negative ion and electrons. A plurality of thermal plasmas 20 with a magnetic field disposed near a magnetic field zero are generated, the plasma from the thermal plasma 20 is diffused through the magnetic field, thereby forming negative ion plasma 30 on the workpiece. The main plasma source is selected from a group consisting of an induction/helicon plasma source, electron cyclotron resonance plasma source and magnetron plasma source.

公开(公告)号：JPH07201962A

公开(公告)日：1995-08-04

申请号：JP26648694

申请日：1994-10-31

Applicant: IBM

Inventor： MAIKERU SUKOTSUTO BAANZU ,  JIYON HAWAADO KERAA ,  JIYOSEFU SUKINAA ROOGAN ,  REIMONDO ROBAATO RATSUKERU ,  ROBAATO IIRAI TOMUKIN ,  ROBAATO PIITAA UESUTOFUIIRUDO

IPC: B23Q3/15 ,  H01L21/00 ,  H01L21/683 ,  H02N13/00 ,  H01L21/68

Abstract: PURPOSE: To obtain superior insulating characteristic, to obtain a flat clamp surface, and to form a high clamp force for a work piece by machining an element part, forming an anode oxidized insulating surface, and operating assembly by using a mount. CONSTITUTION: The outer diameter size of electrodes 100 and 200 is rough machined, the recessed parts are finished by machining, and the vertical surface and the bottom part of the electrode 100 are finished by machining. Then, oxidized surface layers 102 and 202 are formed on the electrodes 100 and 200, and they are mounted to a mount 400. A step difference is formed between a surface 410 corresponding to a top face 110 of the circular electrode 100 and a surface 420 corresponding to a top face 220 of the base electrode 200, and a clamp force is affected by this step difference. When the step difference between the surfaces 110 and 220 is 0.00508 mm, it is allowable. Therefore, superior insulating characteristic is obtained, a flat clamp surface is obtained, and a clamp force for a workpiece can be increased.

公开(公告)号：JPH02235332A

公开(公告)日：1990-09-18

申请号：JP33890089

申请日：1989-12-28

Applicant: IBM

Inventor： DENISU KEISU KOORUTASU ,  JIYON HAWAADO KERAA

IPC: C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46

Abstract: PURPOSE: To realize a plasma processing device which is uniform in plasma density and high in etching rate by a method wherein an induction means which induces an RF induction magnetic field and a confining means which gives a magnetic field to confine a plasma in a chamber are provided in a processing chamber. CONSTITUTION: A wafer 11 is supported on a metal pedestal 23 provided inside a plasma processing chamber 10. Gas is fed to the chamber 10 through a circular manifold 14. Gas inside the manifold 14 is made to pass through an orifice 15, whereby plasma inside the chamber 10 is more enhanced in uniformity. Magnetic poles 21 are arranged in a cylindrical manner to generate an inward magnetic field, where N poles and S poles are alternately disposed to generate a wall of magnetic force which repels electrons toward the inside of the chamber 10, whereby activated ions hitting the wall of magnetic force are lessened in number, and plasma concentrating near the wafer 11 is controlled in uniformity. An RF coil 22 is wound in spiral on an upper cover 17.

公开(公告)号：JPH07201959A

公开(公告)日：1995-08-04

申请号：JP23149094

申请日：1994-09-27

Applicant: IBM

Inventor： MAIKERU SUKOTSUTO BAANZU ,  JIYON HAWAADO KERAA ,  JIYOSEFU SUKINAA ROOGAN ,  ROBAATO IIRAI TOMUKIN ,  ROBAATO PIITAA UESUTOFUIIRUDO

IPC: B23Q3/15 ,  H01L21/68 ,  H01L21/683 ,  H02N13/00

Abstract: PURPOSE: To suppress the formation of vacuum arcs between the back of a wafer in the middle of a process and an electrostatic chuck main body by laying a conductive protection circle floating near self-bias potential, introduced by plasma on the wafer. CONSTITUTION: A circular path 515 extends to the periphery of the outer part of a top face in an electrode 200 and forms a gas supply groove. A protective film 300 facing downward has a thin conductive member 265 having the top face which is flush with the top face 210 of a grasping electrode. A base part 260 is insulated form the electrode 200, and it floats by coupling capacity to a potential approximated to the wafer potential. A wafer 600 is brought into contact with plasma, and therefore it is in self-bias potential which is much lower than the time-averaged plasma potential. Namely, the time-averaged potential on the wafer is typically much smaller than ground potential. Thus, the protective film establishes an equipotential region, which is equal to the potential of a work piece between the work piece and an outer electrode.

公开(公告)号：JPH05109382A

公开(公告)日：1993-04-30

申请号：JP8691492

申请日：1992-04-08

Applicant: IBM

Inventor： JIYON HAWAADO KERAA ,  DENISU KEISU KARUTASU

IPC: H01J37/141 ,  H01J37/05 ,  H01J37/317 ,  H01L21/265 ,  H01L21/268

Abstract: PURPOSE: To converge into a single wide beam by independently controlling different mass ions from different ion sources into the different portions of an analyzing magnet as maintaining a vertical relationship between the beam and a target. CONSTITUTION: An ion beam epitaxial growth device 10 is mainly composed of a high current silicon ion source 11, an impurity ion source 12, 13 of boron and arsenic, a focusing magnet 14, a vacuum chamber 15, a decelerating lens 16, and a target wafer 17. The focal distance of the magnet 14 can be adjusted by changing an angular position through a slot 18. A beam is decelerated to energy suitable for sticking by the lens 16 so as to scan the target 17. By parting electrons from the magnet so as to confine, or granting energy to the low pressure atmosphere inside the magnet of an analyzer, the beam is maintained in high ion current and at low pressure so as to neutralize space charge sufficiently so that electron and charged particle plasma is generated.

公开(公告)号：JPS61253823A

公开(公告)日：1986-11-11

申请号：JP6889386

申请日：1986-03-28

Applicant: IBM

Inventor： BURAIAN HENRII DEJIRETSUTO ,  TOOMASU ANSONII GIYUNSAA ,  CHIYAARUZU JIYOSEFU HENDORITSU ,  JIYON HAWAADO KERAA

IPC: H01L21/302 ,  C23F4/00 ,  H01J37/32 ,  H01L21/3065

公开(公告)号：JPH07201960A

公开(公告)日：1995-08-04

申请号：JP23153394

申请日：1994-09-27

Applicant: IBM

Inventor： MAIKERU SUKOTSUTO BAANZU ,  JIYON HAWAADO KERAA ,  JIYOSEFU SUKINAA ROOGAN ,  ROBAATO IIRAI TOMUKIN ,  ROBAATO PIITAA UESUTOFUIIRUDO

IPC: B23Q3/15 ,  H01L21/683 ,  H02N13/00 ,  H01L21/68

Abstract: PURPOSE: To suppress the formation of vacuum arcs between the back of a wafer in the middle of a process and an electrostatic chuck and to improve insulating destruction resistance by biasing an electrode on self-bias potential, introduced by plasma on the wafer and laying a conductive protection circle in self-bias potential. CONSTITUTION: A wafer 600 is brought into contact with plasma and is at self-bias potential Vsb which is much lower than plasma potential at time average, and two electrodes 100 and 200 of the chuck are biased in prescribed potentials above and below Vsb . A conductive circle 300, which is arranged downward and whose top face is almost flush with the top face of a grasping electrode has one or plural holes making a conductive element 310 that is brought into contact with plasma pass through and it gives reference for self- bias potential. Thus, the two electrodes on characteristic reference potential are maintained for respective bias potentials.

公开(公告)号：JPH05299493A

公开(公告)日：1993-11-12

申请号：JP26093692

申请日：1992-09-30

Applicant: IBM

Inventor： MAIKERU SUKOTSUTO BAANZU ,  DENISU KIISU KOURUTASU ,  JIYON KAATO FUOOSUTAA ,  JIYON HAWAADO KERAA

IPC: B23Q3/15 ,  H01L21/683 ,  H02N13/00 ,  H01L21/68

Abstract: PURPOSE: To obtain a chuck which is operable in a wide temp. and pressure ranges, economically manufacturable and usable, even in a one- or two-polar potential mode by making it from mutually welded laminate boards and providing a plurality of openings which form passages for liq. coolant which extend to the top face. CONSTITUTION: Laminated boards 15, 16 are mutually welded to form a support 12. One of the laminated boards 16 has a backside metal electrode pattern 22 for generating an electrostatic power which holds a semiconductor wafer on a top face 14. The other laminated board 15 has a backside metal electrode pattern 24 to be connected to a power source on the outer surface of the support 12. Vias 26 are provided for electrically connecting the pattern 22, formed in the laminated board 16, to the pattern 24. Openings 18 are provided for forming passages for liq. coolant, which are formed in the laminate boards 16 and positioned in the support 12 and extend from the outer surface of the support 12 to the top face 14.