GETTERING AND REMOVAL OF PARTICLES DURING PLASMA TREATMENT

    公开(公告)号:JPH05217950A

    公开(公告)日:1993-08-27

    申请号:JP22608692

    申请日:1992-08-25

    Applicant: IBM

    Abstract: PURPOSE: To provide an equipment and method for plasma treatment, including the gettering of particles of a high charge/mass ratio from a semiconductor wafer. CONSTITUTION: In a first mode, magnetic fields 27, 29 which cross an electric field E are generated using magnets 15, 17 to extract negative particles from a wafer 1, and thereby a sheath which could trap particles is prevented from being formed. In a second case, a power supply is connected to a wafer electrode to keep negative charges on the wafer, and thereby negative particles are prevented from being attracted to the surface of the wafer, when plasma is turned off. In another case, using a source of low density plasma, a large plasma sheath for allowing particles to cross a chamber and be gettered is generated. With low density plasma discharging and a high density pulse that follows the low density plasma, a negative effect of an insulating layer between the wafer and the wafer electrode is eliminated.

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