公开(公告)号：US3920483A

公开(公告)日：1975-11-18

申请号：US52711574

申请日：1974-11-25

Applicant: IBM

Inventor： JOHNSON JR CLAUDE ,  KU SAN-MEI ,  LILLJA HAROLD VINELL ,  SHIH-TO PAN EDWARD

IPC: H01L21/266 ,  G03F7/40 ,  H01L21/00 ,  H01L21/56 ,  H01L21/26

CPC classification number: H01L21/00 ,  G03F7/40 ,  H01L21/56 ,  H01L2924/0002 ,  Y10S148/131 ,  H01L2924/00

Abstract: An improvement in the method of ion implantation into a semiconductor substrate through a photoresist mask wherein the photoresist mask is subjected to an RF gas plasma oxidation prior to the ion implantation step for a period sufficient to reduce the thickness of the photoresist layer. The ion implantation is then carried out through the treated photoresist mask.

Abstract translation: 通过光致抗蚀剂掩模将离子注入半导体衬底的方法的改进，其中在离子注入步骤之前对光致抗蚀剂掩模进行RF气体等离子体氧化一段足以减小光致抗蚀剂层厚度的时间。 然后通过经处理的光致抗蚀剂掩模进行离子注入。

公开(公告)号：DE2963280D1

公开(公告)日：1982-08-19

申请号：DE2963280

申请日：1979-12-14

Applicant: IBM

Inventor： HANSEN THOMAS ADRIAN ,  JOHNSON JR CLAUDE ,  WILBARG ROBERT RONALD

IPC: H01L31/04 ,  H01L21/302 ,  H01L21/3065 ,  H01L31/02 ,  H01L31/0236 ,  H01L31/18 ,  H01L21/306

Abstract: A differential reactive ion etching process significantly reduces the reflectivity of silicon. The process takes place in a reactive ion etching tool, typically a diode-configured system employing ambient gases which react with the silicon.