2.
    发明专利
    未知

    公开(公告)号:DE2534801A1

    公开(公告)日:1976-05-26

    申请号:DE2534801

    申请日:1975-08-05

    Applicant: IBM

    Abstract: An improvement in the method of ion implantation into a semiconductor substrate through a photoresist mask wherein the photoresist mask is subjected to an RF gas plasma oxidation prior to the ion implantation step for a period sufficient to reduce the thickness of the photoresist layer. The ion implantation is then carried out through the treated photoresist mask.

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