公开(公告)号：AU1665476A

公开(公告)日：1978-02-09

申请号：AU1665476

申请日：1976-08-06

Applicant: IBM

Inventor： BURR PETER ,  JOY RICHARD CARLETON ,  ZIEGLER JAMES FRANCIS

IPC: H01L27/08 ,  H01L21/265 ,  H01L21/322 ,  H01L21/331 ,  H01L21/76 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/092 ,  H01L29/08 ,  H01L29/167 ,  H01L29/73 ,  H01L29/78 ,  H01L21/22 ,  H01L21/20 ,  H01L21/31 ,  H01L29/72

Abstract: The device structure is a bi-polar transistor having a region of inert atoms located in the collector adjacent to the base-collector junction. Another embodiment of the invention is a complementary insulated gate field effect transistor (IGFET) structure having N and P channel IGFETs with regions of implanted ions beneath the source and drain of one or both transistors, and/or annular regions projecting inwardly from the surface that surround or separate the different types of IGFETs.

公开(公告)号：DE3279524D1

公开(公告)日：1989-04-13

申请号：DE3279524

申请日：1982-08-10

Applicant: IBM

Inventor： JOY RICHARD CARLETON ,  KEMLAGE BERNARD MICHAEL ,  MAUER IV JOHN LESTER

IPC: H01L21/822 ,  H01L21/302 ,  H01L21/31 ,  H01L21/3205 ,  H01L21/331 ,  H01L21/74 ,  H01L21/76 ,  H01L21/762 ,  H01L21/763 ,  H01L23/52 ,  H01L27/04 ,  H01L29/73

Abstract: An integrated circuit structure having substrate contacts formed as a part of the isolation structure and the method to form such structure is described. The integrated circuit structure is composed of a monocrystalline silicon body (2, 4) having a pattern of dielectric isolation surrounding regions of the monocrystalline silicon in the body. The dielectric isolation pattern includes a recessed dielectric portion (14) at and just below the surface of the integrated circuit and a deep portion (30) which extends through the recessed dielectric portion (14) and extends further into the monocrystalline silicon body (2, 4) than the recessed portion. A highly doped polycrystalline silicon substrate contact (30) is located within the deep portion of the pattern of isolation. The substrate contact extends from the surface of the pattern of isolation down to the bottom of the deep portion of the isolation where the contact electrically connects to the silicon body. Any of a variety of integrated circuit device structures may be incorporated within the monocrystalline silicon regions. These devices include bipolar transistors, field effect transistors, capacitors, diodes, resistors and the like.

公开(公告)号：CH600571A5

公开(公告)日：1978-06-15

申请号：CH787876

申请日：1976-06-21

Applicant: IBM

Inventor： BURR PETER ,  JOY RICHARD CARLETON ,  ZIEGLER JAMES FRANCIS

IPC: H01L27/08 ,  H01L21/265 ,  H01L21/322 ,  H01L21/331 ,  H01L21/76 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/092 ,  H01L29/08 ,  H01L29/167 ,  H01L29/73 ,  H01L29/78 ,  H01L27/04

Abstract: The device structure is a bi-polar transistor having a region of inert atoms located in the collector adjacent to the base-collector junction. Another embodiment of the invention is a complementary insulated gate field effect transistor (IGFET) structure having N and P channel IGFETs with regions of implanted ions beneath the source and drain of one or both transistors, and/or annular regions projecting inwardly from the surface that surround or separate the different types of IGFETs.

公开(公告)号：DE3279525D1

公开(公告)日：1989-04-13

申请号：DE3279525

申请日：1982-08-10

Applicant: IBM

Inventor： JOY RICHARD CARLETON ,  KEMLAGE BERNARD MICHAEL ,  MAUER IV JOHN LESTER

IPC: H01L21/76 ,  H01L21/31 ,  H01L21/331 ,  H01L21/74 ,  H01L21/762 ,  H01L21/763 ,  H01L21/822 ,  H01L27/04 ,  H01L29/73

Abstract: An integrated circuit structure having substrate contacts formed as a part of the isolation structure and method for making the same is described. The integrated circuit structure is composed of a monocrystalline silicon body (2, 4) having a pattern of dielectric isolation surrounding regions of the monocrystalline silicon in the body. The dielectric isolation pattern includes a recessed dielectric portion (22, 24) at and just below the surface of the integrated circuit and a deep portion which extends from the side of the recessed dielectric portion opposite to that portion at the surface of said body into the monocrystalline silicon body. A highly doped polycrystalline silicon substrate contact (20) is located within the deep portion of the pattern of isolation. At certain locations the deep portion of the pattern extends to the surface of the silicon body where interconnection metallurgy can electrically contact the polycrystalline silicon so as to form a substrate contact to the bottom of the deep portion of the isolation where the contact electrically connects to the silicon body. Any of a variety of integrated circuit device structures may be incorporated within the monocrystalline silicon regions. These devices include bipolar transistors, field effect transistors, capacitors, diodes, resistors and the like.

公开(公告)号：DE2634500A1

公开(公告)日：1977-02-17

申请号：DE2634500

申请日：1976-07-31

Applicant: IBM

Inventor： BURR PETER ,  JOY RICHARD CARLETON ,  ZIEGLER JAMES FRANCIS

IPC: H01L27/08 ,  H01L21/265 ,  H01L21/322 ,  H01L21/331 ,  H01L21/76 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/092 ,  H01L29/08 ,  H01L29/167 ,  H01L29/73 ,  H01L29/78

Abstract: The device structure is a bi-polar transistor having a region of inert atoms located in the collector adjacent to the base-collector junction. Another embodiment of the invention is a complementary insulated gate field effect transistor (IGFET) structure having N and P channel IGFETs with regions of implanted ions beneath the source and drain of one or both transistors, and/or annular regions projecting inwardly from the surface that surround or separate the different types of IGFETs.