公开(公告)号：CH600571A5

公开(公告)日：1978-06-15

申请号：CH787876

申请日：1976-06-21

Applicant: IBM

Inventor： BURR PETER ,  JOY RICHARD CARLETON ,  ZIEGLER JAMES FRANCIS

IPC: H01L27/08 ,  H01L21/265 ,  H01L21/322 ,  H01L21/331 ,  H01L21/76 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/092 ,  H01L29/08 ,  H01L29/167 ,  H01L29/73 ,  H01L29/78 ,  H01L27/04

Abstract: The device structure is a bi-polar transistor having a region of inert atoms located in the collector adjacent to the base-collector junction. Another embodiment of the invention is a complementary insulated gate field effect transistor (IGFET) structure having N and P channel IGFETs with regions of implanted ions beneath the source and drain of one or both transistors, and/or annular regions projecting inwardly from the surface that surround or separate the different types of IGFETs.

公开(公告)号：DE3067822D1

公开(公告)日：1984-06-20

申请号：DE3067822

申请日：1980-06-13

Applicant: IBM

Inventor： BURR PETER ,  CHASE BRIAN DAVID

IPC: H01J29/54 ,  H01F27/30 ,  H01J29/70 ,  H04N9/28

Abstract: Convergence of the beams of an in-line gun shadow mask cathode-ray tube is provided by windings on a common core and generating pairs of quadruple and six-pole magnetic fields, respectively. The core is provided with non-magnetic ribs each having a projection for the purpose of locating the windings.

公开(公告)号：AU1665476A

公开(公告)日：1978-02-09

申请号：AU1665476

申请日：1976-08-06

Applicant: IBM

Inventor： BURR PETER ,  JOY RICHARD CARLETON ,  ZIEGLER JAMES FRANCIS

IPC: H01L27/08 ,  H01L21/265 ,  H01L21/322 ,  H01L21/331 ,  H01L21/76 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/092 ,  H01L29/08 ,  H01L29/167 ,  H01L29/73 ,  H01L29/78 ,  H01L21/22 ,  H01L21/20 ,  H01L21/31 ,  H01L29/72

Abstract: The device structure is a bi-polar transistor having a region of inert atoms located in the collector adjacent to the base-collector junction. Another embodiment of the invention is a complementary insulated gate field effect transistor (IGFET) structure having N and P channel IGFETs with regions of implanted ions beneath the source and drain of one or both transistors, and/or annular regions projecting inwardly from the surface that surround or separate the different types of IGFETs.

公开(公告)号：DE3066757D1

公开(公告)日：1984-04-05

申请号：DE3066757

申请日：1980-10-07

Applicant: IBM

Inventor： BURR PETER ,  CHASE BRIAN DAVID ,  PATON ANDREW ,  SOWTER BRIAN RAYMOND

IPC: H04N17/04 ,  H04N9/62

公开(公告)号：CA1048653A

公开(公告)日：1979-02-13

申请号：CA258550

申请日：1976-08-06

Applicant: IBM

Inventor： BURR PETER ,  JOY RICHARD C ,  ZIEGLER JAMES F

IPC: H01L27/08 ,  H01L21/265 ,  H01L21/322 ,  H01L21/331 ,  H01L21/76 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/092 ,  H01L29/08 ,  H01L29/167 ,  H01L29/73 ,  H01L29/78

Abstract: METHOD AND STRUCTURE FOR CONTROLLING CARRIER LIFETIME IN SEMICONDUCTOR DEVICES A method is presented for controlling the minority carrier lifetime in a semiconductor device by selectively implanting inert atoms such as helium, argon, neon, krypton, and xenon into specific regions of the device. The device structure is a bi-polar transistor having a region of inert atoms located in the collector adjacent to the base-collector junction. Another embodiment of the invention is a complementary insulated gate field effect transistor (IGFET) structure having N and P channel IGFETs with regions of implanted ions beneath the source and drain of one or both transistors, and/or annular regions projecting inwardly from the surface that surround or separate the different types of IGFETs.

公开(公告)号：FR2320636A1

公开(公告)日：1977-03-04

申请号：FR7619836

申请日：1976-06-24

Applicant: IBM

Inventor： BURR PETER ,  JOY RICHARD C ,  ZIEGLER JAMES F

IPC: H01L27/08 ,  H01L21/265 ,  H01L21/322 ,  H01L21/331 ,  H01L21/76 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/092 ,  H01L29/08 ,  H01L29/167 ,  H01L29/73 ,  H01L29/78 ,  H01L29/227

Abstract: The device structure is a bi-polar transistor having a region of inert atoms located in the collector adjacent to the base-collector junction. Another embodiment of the invention is a complementary insulated gate field effect transistor (IGFET) structure having N and P channel IGFETs with regions of implanted ions beneath the source and drain of one or both transistors, and/or annular regions projecting inwardly from the surface that surround or separate the different types of IGFETs.

公开(公告)号：DE2634500A1

公开(公告)日：1977-02-17

申请号：DE2634500

申请日：1976-07-31

Applicant: IBM

Inventor： BURR PETER ,  JOY RICHARD CARLETON ,  ZIEGLER JAMES FRANCIS

IPC: H01L27/08 ,  H01L21/265 ,  H01L21/322 ,  H01L21/331 ,  H01L21/76 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/092 ,  H01L29/08 ,  H01L29/167 ,  H01L29/73 ,  H01L29/78

Abstract: The device structure is a bi-polar transistor having a region of inert atoms located in the collector adjacent to the base-collector junction. Another embodiment of the invention is a complementary insulated gate field effect transistor (IGFET) structure having N and P channel IGFETs with regions of implanted ions beneath the source and drain of one or both transistors, and/or annular regions projecting inwardly from the surface that surround or separate the different types of IGFETs.