公开(公告)号：CH600571A5

公开(公告)日：1978-06-15

申请号：CH787876

申请日：1976-06-21

Applicant: IBM

Inventor： BURR PETER ,  JOY RICHARD CARLETON ,  ZIEGLER JAMES FRANCIS

IPC: H01L27/08 ,  H01L21/265 ,  H01L21/322 ,  H01L21/331 ,  H01L21/76 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/092 ,  H01L29/08 ,  H01L29/167 ,  H01L29/73 ,  H01L29/78 ,  H01L27/04

Abstract: The device structure is a bi-polar transistor having a region of inert atoms located in the collector adjacent to the base-collector junction. Another embodiment of the invention is a complementary insulated gate field effect transistor (IGFET) structure having N and P channel IGFETs with regions of implanted ions beneath the source and drain of one or both transistors, and/or annular regions projecting inwardly from the surface that surround or separate the different types of IGFETs.

公开(公告)号：AU8575775A

公开(公告)日：1977-04-21

申请号：AU8575775

申请日：1975-10-15

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  WOODALL JERRY MACPHERSON ,  ZIEGLER JAMES FRANCIS

IPC: F24J2/48 ,  F24S10/75 ,  G02B5/00 ,  F24J3/02 ,  C23C11/02

Abstract: An efficient converter of photon energy to heat has been devised comprising a dense array of metal whiskers grown with spacings between the whiskers of a few wavelengths of visible light. The material selected, and tungsten is exemplary of such materials, has low emissivity, but achieves significant optical absorption by trapping the light impinging on the dense array by a geometric maze effect. The characteristics of the surface are excellent for the conversion of solar energy to heat.

公开(公告)号：DE2634500A1

公开(公告)日：1977-02-17

申请号：DE2634500

申请日：1976-07-31

Applicant: IBM

Inventor： BURR PETER ,  JOY RICHARD CARLETON ,  ZIEGLER JAMES FRANCIS

IPC: H01L27/08 ,  H01L21/265 ,  H01L21/322 ,  H01L21/331 ,  H01L21/76 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/092 ,  H01L29/08 ,  H01L29/167 ,  H01L29/73 ,  H01L29/78

Abstract: The device structure is a bi-polar transistor having a region of inert atoms located in the collector adjacent to the base-collector junction. Another embodiment of the invention is a complementary insulated gate field effect transistor (IGFET) structure having N and P channel IGFETs with regions of implanted ions beneath the source and drain of one or both transistors, and/or annular regions projecting inwardly from the surface that surround or separate the different types of IGFETs.

公开(公告)号：DE2539101A1

公开(公告)日：1976-04-29

申请号：DE2539101

申请日：1975-09-03

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  WOODALL JERRY MACPHERSON ,  ZIEGLER JAMES FRANCIS

IPC: F24J2/48 ,  F24S10/75 ,  G02B5/00 ,  F24J3/02

Abstract: An efficient converter of photon energy to heat has been devised comprising a dense array of metal whiskers grown with spacings between the whiskers of a few wavelengths of visible light. The material selected, and tungsten is exemplary of such materials, has low emissivity, but achieves significant optical absorption by trapping the light impinging on the dense array by a geometric maze effect. The characteristics of the surface are excellent for the conversion of solar energy to heat.

公开(公告)号：DE2457484A1

公开(公告)日：1975-07-10

申请号：DE2457484

申请日：1974-12-05

Applicant: IBM

Inventor： KIRCHNER CHARLES JOHN ,  MAYER JAMES WALTER ,  ZIEGLER JAMES FRANCIS

IPC: H01L21/62 ,  H01L21/00 ,  H01L23/532 ,  H01L21/28

公开(公告)号：DE3379522D1

公开(公告)日：1989-05-03

申请号：DE3379522

申请日：1983-07-19

Applicant: IBM ,  ATOMIC ENERGY AUTHORITY UK

Inventor： CAIRNS JAMES ANTHONY ,  ZIEGLER JAMES FRANCIS

IPC: H01L23/02 ,  H01L23/08 ,  H01L23/15 ,  H01L23/556 ,  H05K1/03 ,  H05K3/38 ,  H01L23/54 ,  H01L23/14

Abstract: Coated ceramic substrates or structures having a barrier layer against alpha-particle radiation and integrated circuits prepared therefrom. Ceramic surfaces having reduced or modified surface roughness are also provided.As shown in the Figure the ceramic substrate is coated with a layer of high purity ceramic before the metallization layer is deposited. An electronic chip is then flip bonded to the coated substrate. In one example the coating is formed by applying droplets of a mix comprising a surfactant and a colloidal dispersion of alumina to the substrate, spinning the substrate and then drying the spun layer. Thereafter the ceramic is fired e.g. at 850°C for 15 minutes.

公开(公告)号：DE2812740A1

公开(公告)日：1978-10-05

申请号：DE2812740

申请日：1978-03-23

Applicant: IBM

Inventor： MICHEL ALWIN EARL ,  SCHWENKER ROBERT OTTO ,  ZIEGLER JAMES FRANCIS

IPC: H01L27/08 ,  H01L21/265 ,  H01L21/331 ,  H01L21/74 ,  H01L21/76 ,  H01L29/36 ,  H01L29/73 ,  H01L21/72

公开(公告)号：DE2749593A1

公开(公告)日：1978-06-22

申请号：DE2749593

申请日：1977-11-05

Applicant: IBM

Inventor： CAIRNS JAMES ANTHONY ,  LURIO ALLEN ,  ZIEGLER JAMES FRANCIS

IPC: B23K15/00 ,  G01N23/225 ,  H01J37/244 ,  H01J37/317 ,  H01L21/265 ,  G01T1/29 ,  H01L21/26

Abstract: Practice of this disclosure obtains a measure of the dose or fluence of implanted ions into a target for device fabrication by monitoring emitted X-rays. Illustratively, ion beams of B+, P+ or As+ have been implanted into Si over the ion energy range of 20 KeV to 2800 KeV and the data of counts of emitted X-rays has been correlated with both the solid angle intercepted by the counter and the charge intercepted by the target. In particular, the low energy soft Si(L) X-rays at 136A have been discovered for the practice of this disclosure to be very intense. The principles of this disclosure are especially applicable for very low ion doses, i.e. APPROXLESS 1012/cm2 where charge integration is not feasible; and for neutral beam implantation with currents above about 2 milliamperes. Reproducible semiconductor devices can be fabricated by practice of this disclosure, i.e., with substantially reproducible operational characteristics, e.g., bipolar and field-effect transistors with silicon integrated circuit technology.

公开(公告)号：AU1665476A

公开(公告)日：1978-02-09

申请号：AU1665476

申请日：1976-08-06

Applicant: IBM

Inventor： BURR PETER ,  JOY RICHARD CARLETON ,  ZIEGLER JAMES FRANCIS

IPC: H01L27/08 ,  H01L21/265 ,  H01L21/322 ,  H01L21/331 ,  H01L21/76 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/092 ,  H01L29/08 ,  H01L29/167 ,  H01L29/73 ,  H01L29/78 ,  H01L21/22 ,  H01L21/20 ,  H01L21/31 ,  H01L29/72

Abstract: The device structure is a bi-polar transistor having a region of inert atoms located in the collector adjacent to the base-collector junction. Another embodiment of the invention is a complementary insulated gate field effect transistor (IGFET) structure having N and P channel IGFETs with regions of implanted ions beneath the source and drain of one or both transistors, and/or annular regions projecting inwardly from the surface that surround or separate the different types of IGFETs.