公开(公告)号：JP2001351976A

公开(公告)日：2001-12-21

申请号：JP2001117668

申请日：2001-04-17

Applicant: IBM

Inventor： DALTON TIMOTHY J ,  CHRISTOPHER V JARNES ,  JOYCE C RYUU ,  PURUSHOTHAMAN SAMPATH

IPC: H01L21/28 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide a permanent protection hard mask for protecting the dielectric characteristics of a main dielectric layer that has undesired low permittivity of a semiconductor device due to undesired increase in permittivity, undesired increase in current leakage, and a low device yield caused by surface scratch, when a continuous treatment processing is conducted. SOLUTION: This protection hard mask has a one- or two-layer sacrificial hard mask that is especially effective, when interconnection structure such as a via opening and/or a line is formed between low-permittivity materials, while a final product is manufacture. The sacrificial and permanent hard masks are formed of the same precursor substance in a single process, where process conditions are changed for giving a film having different permittivity. Most preferably, dual damascene structure has three-layer hard masks 40, 50, and 60 that are formed on the inter-level dielectric with bulk low permittivity, before the interconnection structure of the inter-level dielectric is formed.