公开(公告)号：CA1111570A

公开(公告)日：1981-10-27

申请号：CA307591

申请日：1978-07-18

Applicant: IBM

Inventor： DALAL HORMAZDYAR M ,  GHAFGHAICHI MAJID ,  KASPRZAK LUCIAN A ,  WIMPFHEIMER HANS

IPC: H01L21/768 ,  H01L21/28 ,  H01L21/285 ,  H01L21/338 ,  H01L21/60 ,  H01L23/532 ,  H01L29/43 ,  H01L29/45 ,  H01L29/47 ,  H01L29/872 ,  H01L29/18

Abstract: TANTALUM SEMICONDUCTOR CONTACTS AND METHOD FOR FABRICATING SAME A silicon semiconductor device having contacts which include tantalum. The tantalum is useful in particular for fabricating Schottky barrier diodes having a low barrier height. The method includes: precleaning the silicon substrate prior to depositing the tantalum; depositing the tantalum at low pressure and low substrate temperature to avoid oxidation of the tantalum; and sintering the contact to reduce any interfacial charges and films remaining between the silicon and tantalum. When a metal which reacts with silicon during processing, such as aluminum, is used as interconnection metallurgy, a layer of chrome must be deposited between the tantalum and aluminum.