Apparatus and method for detection of internal semiconductor inclusions
    1.
    发明授权
    Apparatus and method for detection of internal semiconductor inclusions 失效
    用于检测内部半导体封装的装置和方法

    公开(公告)号:US3767304A

    公开(公告)日:1973-10-23

    申请号:US3767304D

    申请日:1972-07-03

    Applicant: IBM

    CPC classification number: G01N21/9505 G01R31/2656

    Abstract: An apparatus for detecting the presence of inclusions in semiconductor material having a polychromatic light source, a support for a semiconductor body, a light sensing means positioned to operate on light transmitted through the body from the light source, the sensing means including a substrate of the same type of semiconductor materials as the material of the semiconductor body, and having at least a PN junction in the substrate with means to backbias the junction, a means to indicate the relative amounts of light transmitted through the semiconductor body that is sensed by the sensing means. A method for detecting internal inclusion in a semiconductor body by directing through the body a beam of polychromatic light, sensing the light energy transmitted to the body with a light sensing element of the same type semiconductor material as the body being investigated.

    Abstract translation: 一种用于检测具有多色光源的半导体材料中的夹杂物的存在的装置,用于半导体本体的支撑件,定位成对从光源透射通过本体的光进行操作的光感测装置,所述感测装置包括: 与半导体本体的材料相同类型的半导体材料,并且在衬底中具有至少一个PN结的装置,其具有用于反向连接的装置,用于指示透射通过半导体主体的光的相对量的装置,其通过感测感测 手段。

    MEASUREMENT OF CARRIERS CONCENTRATION OF SEMICONDUCTIVE MATERIAL

    公开(公告)号:CA924927A

    公开(公告)日:1973-04-24

    申请号:CA100479

    申请日:1970-12-14

    Applicant: IBM

    Abstract: 1306850 Optical testing INTERNATIONAL BUSINESS MACHINES CORP 3 Dec 1970 [15 Dec 1969] 57393/70 Heading G2J The impurity concentration of semi-conductive material is determined by measuring the angle of incidence of monochromatic infrared light (polarised in the plane of incidence) at which reflectivity is a minimum. When two such minimums are found, they may be distinguished by a further test (a) intensity of reflected beam or (b) measuring angular spread for a given magnitude of intensity or (c) measuring the intensity of the plane polarized light with the plane of polarization perpendicular to the plane of incidence.

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