Abstract:
An apparatus for detecting the presence of inclusions in semiconductor material having a polychromatic light source, a support for a semiconductor body, a light sensing means positioned to operate on light transmitted through the body from the light source, the sensing means including a substrate of the same type of semiconductor materials as the material of the semiconductor body, and having at least a PN junction in the substrate with means to backbias the junction, a means to indicate the relative amounts of light transmitted through the semiconductor body that is sensed by the sensing means. A method for detecting internal inclusion in a semiconductor body by directing through the body a beam of polychromatic light, sensing the light energy transmitted to the body with a light sensing element of the same type semiconductor material as the body being investigated.
Abstract:
1306850 Optical testing INTERNATIONAL BUSINESS MACHINES CORP 3 Dec 1970 [15 Dec 1969] 57393/70 Heading G2J The impurity concentration of semi-conductive material is determined by measuring the angle of incidence of monochromatic infrared light (polarised in the plane of incidence) at which reflectivity is a minimum. When two such minimums are found, they may be distinguished by a further test (a) intensity of reflected beam or (b) measuring angular spread for a given magnitude of intensity or (c) measuring the intensity of the plane polarized light with the plane of polarization perpendicular to the plane of incidence.