公开(公告)号：GB2506816A

公开(公告)日：2014-04-09

申请号：GB201401778

申请日：2012-06-21

Applicant: IBM

Inventor： CAMILLO-CASTILLO RENATA ,  GRAY PETER B ,  HARAME DAVID L ,  JOSEPH ALVIN ,  KHATER MARWAN ,  LIU QIZHI

IPC: H01L21/8249 ,  H01L29/732

Abstract: Methods for fabricating bipolar junction transistors, bipolar junction transistors made by the methods, and design structures for a bipolar junction transistor. The bipolar junction transistor (80) includes a dielectric layer (32) on an intrinsic base (84) and an extrinsic base (82) at least partially separated from the intrinsic base by the dielectric layer. An emitter opening (52) extends through the extrinsic base and the dielectric layer. The dielectric layer is recessed laterally relative to the emitter opening to define a cavity (60a, 60b) between the intrinsic base and the extrinsic base. The cavity is filled with a semiconductor layer (64) that physically links the extrinsic base and the intrinsic base together.