公开(公告)号：JPH0697522A

公开(公告)日：1994-04-08

申请号：JP32832691

申请日：1991-11-18

Applicant: IBM

Inventor： DEIITAA PAURU KERUN ,  ROBAATO BENJIYAMIN RAIBOUITSUT ,  KIMU YAN RII ,  MAAKU AI RUTSUTOUITSUCHI

IPC: H01L39/24

Abstract: PURPOSE: To manufacture with good reproducibility without breaking a thin film of a high Tc superconducting material, having good superconducting characteristic. CONSTITUTION: A thin film 26 of a superconducting material is coated on a substantially crystalline substrate 2, partially coated with an epitaxial growth restricting material layer 4. In a region directly coated on the substrate 2 among the thin films 26 of this superconducting material, the crystal structure is substantially expitaxial, and in a portion coated on the epitaxial growth-restricting material layer 4, the crystal structure is substantially non-epitaxial. In the region of the thin films 26 of this superconducting material, in which the crystal structure is substantially expitaxial, there is a tendency that the region becomes superconducting at a critical temperature temperature or lower, but in the region of the thin films 26 of this superconducting material, in which the crystalline structure is substantially non-expitaxial, there is a tendency that the region does not become superconducting at a temperature of critical transfer temperature or lower.

公开(公告)号：JPH07140666A

公开(公告)日：1995-06-02

申请号：JP9326594

申请日：1994-05-02

Applicant: IBM

Inventor： UIRIAMU ROSU BURANSUBUORUDO ,  JIEIMUZU TOOMASU FUAHEI ,  JIYOOJI JIYOZEFU HETSUFUERON ,  UUSON FUAN ,  PUREMURASA JIYAGANASAN ,  AAMADO DAUODO KATONANI ,  MAAMOUDO EMU KOOJIYASUTEE ,  RANII WAIIRIN KUUON ,  KIMU YAN RII ,  HAABANSU SUINGUU SASHIYUDEBU ,  KURISHIYUNA GANDEII SASHIYUDEB ,  RATONAMU SUURIYAKUMARAN ,  ROBAATO RABUIN UTSUDO

IPC: C08L25/02 ,  C08L61/10 ,  C08L101/00 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027

Abstract: PURPOSE: To provide a compsn. which is hardly subjected to a disadvantageous reaction with environment pollutant material and to enhance the allowance to the variable or long delay between exposure and baking after the exposure or between the baking after the exposure and developing. CONSTITUTION: This aq. base developable microlithographic resist compsn. contains a film formable polymer, such as polyhydroxy styrene having chemically bonded iterative hydroxyl groups, an acid unstable compd. contg. a ketal component, such as 2-(2-methoxypropyl) and an acid generating compd., such as N-(trifluoromethyl sulfonyloxy)-nitronaphthalimide, which forms an acid by exposure to chemical rays in the mixture. The acid generated by the exposure induces cleavage of at least part of the compds. contg. the ketal component and the exposed compsn. is made selectively more soluble in the aq. base as compared with the non-exposed compsn.