公开(公告)号：JPH0862835A

公开(公告)日：1996-03-08

申请号：JP19029695

申请日：1995-07-26

Applicant: IBM

Inventor： JIEEMUSU TOMASU FUAHEI ,  BURAIAN UEIN HAABUSUTO ,  REO ROORENSU RENEHAN ,  UEIN MAATEIN MOROO ,  GARII TOMASU SUPINITSURO ,  KEBUIN MAIKERU UERUSHIYU ,  ROBAATO RABUIN UTSUDO

IPC: G03F7/004 ,  C08G65/40 ,  C08G67/00 ,  C09D171/00 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a material suitable for an antireflection film, used in microlithography by far-UV light. SOLUTION: A copolymer of benzophenone and bisphenol A is known to have far-UV absorptivity. Then, the copolymer is useful particularly as the antireflection film in the field applying microlithography. The absorption at 248nm is intensified, when anthracene is introduced into the copolymer. The terminalstopping agent used for the copolymer is widely changeable according to the need of a user and is so selectable as to promote adhesiveness, stability and absorption of different wavelengths.

公开(公告)号：JPH07140666A

公开(公告)日：1995-06-02

申请号：JP9326594

申请日：1994-05-02

Applicant: IBM

Inventor： UIRIAMU ROSU BURANSUBUORUDO ,  JIEIMUZU TOOMASU FUAHEI ,  JIYOOJI JIYOZEFU HETSUFUERON ,  UUSON FUAN ,  PUREMURASA JIYAGANASAN ,  AAMADO DAUODO KATONANI ,  MAAMOUDO EMU KOOJIYASUTEE ,  RANII WAIIRIN KUUON ,  KIMU YAN RII ,  HAABANSU SUINGUU SASHIYUDEBU ,  KURISHIYUNA GANDEII SASHIYUDEB ,  RATONAMU SUURIYAKUMARAN ,  ROBAATO RABUIN UTSUDO

IPC: C08L25/02 ,  C08L61/10 ,  C08L101/00 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027

Abstract: PURPOSE: To provide a compsn. which is hardly subjected to a disadvantageous reaction with environment pollutant material and to enhance the allowance to the variable or long delay between exposure and baking after the exposure or between the baking after the exposure and developing. CONSTITUTION: This aq. base developable microlithographic resist compsn. contains a film formable polymer, such as polyhydroxy styrene having chemically bonded iterative hydroxyl groups, an acid unstable compd. contg. a ketal component, such as 2-(2-methoxypropyl) and an acid generating compd., such as N-(trifluoromethyl sulfonyloxy)-nitronaphthalimide, which forms an acid by exposure to chemical rays in the mixture. The acid generated by the exposure induces cleavage of at least part of the compds. contg. the ketal component and the exposed compsn. is made selectively more soluble in the aq. base as compared with the non-exposed compsn.

公开(公告)号：JPH0643631A

公开(公告)日：1994-02-18

申请号：JP6393793

申请日：1993-03-23

Applicant: IBM

Inventor： JIEEMUZU TOOMASU FUAHEI ,  MAHAMUUDO MUSUTAFUAA HOJIYASUT ,  RONARUDO UEIN NANESU ,  SUTANRII YUUJIN PEREOORU ,  GIYARII TOOMASU SUPINITSURO ,  KEBUIN MAIKERU UERUSHIYU ,  ROBAATO RABUIN UTSUDO

IPC: G03F7/004 ,  H01L21/027

Abstract: PURPOSE: To obtain a chemically strengthened photoresist compsn. contg. a nonionic polyglycol type surfactant having hydroxyl groups as terminal groups. CONSTITUTION: A compsn. contg. an alkali-soluble hydroxyl substd. arom. polymer compsn., sulfonic ester having imide or oxime and a nonionic polyglycol type surfactant having hydroxyl groups as terminal groups is prepd. This polyglycol-contg. compsn. improves the contrast of a resist by retarding the absorption of environmental poison such as org. and inorg. bases causing the deformation of an image on the top of a large-sized silicon wafer. The polyglycol extends dose latitude and improves the allowable focus range of the resist so that a submicron image can be resolved.