公开(公告)号：JPH11284220A

公开(公告)日：1999-10-15

申请号：JP5222499

申请日：1999-03-01

Applicant: IBM

Inventor： CHU JACK O ,  ISMAIL KHALID EZZELDIN ,  KOESTER STEVEN JOHN ,  KLEPSER BERND-ULRICH H

IPC: H01L31/10 ,  H01L27/144 ,  H01L31/0312 ,  H01L31/0352

Abstract: PROBLEM TO BE SOLVED: To simply integrate a high-speed and high-response photo detector in a monolithic form, by the method wherein a quantum well layer functions as a conductive channel so that a spacer layer separates a dopant in a supply layer from the conductive channel. SOLUTION: It comprises a single crystal semiconductor substrate 1, Si1-x Gex buffer layer 2 graded from x=0 to y ranging from 0.1 to 1.0, relaxing Si1-x Gex layer 3 of 0.25-10 μm thick, quantum well layer 4, undoped Si1-y Gey spacer layer 5 and doped Si1-y Gey supply layer 6. The relaxing Si1-x Gex layer 3 functions as an absorption region of a photo detector, the quantum well layer 4 can function as a conductive channel of a field effect transistor and the spacer layer 5 functions so as to separate a dopant in the supply layer from the conductive channel. Thus it is possible to manufacture a photo detector having an elevated speed and response, compared with a bulk Si.

公开(公告)号：DE69941588D1

公开(公告)日：2009-12-10

申请号：DE69941588

申请日：1999-02-18

Applicant: IBM

Inventor： CHU JACK OON ,  ISMAIL KHALID EZZELDIN ,  KOESTER STEVEN JOHN ,  KLEPSER BERND-ULRICH H

IPC: H01L27/144 ,  H01L31/10 ,  H01L31/0312 ,  H01L31/0352

Abstract: An integrated optoelectronic circuit and process for making is described incorporating a photodetector and a MODFET on a chip. The chip contains a single-crystal semiconductor substrate, a buffer layer of SiGe graded in composition, a relaxed SiGe layer, a quantum well layer, an undoped SiGe spacer layer and a doped SiGe supply layer. The photodetector may be a metal-semiconductor-metal (MSM) or a p-i-n device. The detector may be integrated with an n- or p-type MODFET, or both in a CMOS configuration, and the MODFET can incorporate a Schottky or insulating gate. The invention overcomes the problem of producing Si-manufacturing-compatible monolithic high-speed optoelectronic circuits for 850 nm operation by using epixially-grown Si/SiGe heterostructure layers.