Method and system for identifying faulty memory element in memory system
    2.
    发明专利
    Method and system for identifying faulty memory element in memory system 有权
    用于识别存储系统中的故障记忆元素的方法和系统

    公开(公告)号:JP2008165772A

    公开(公告)日:2008-07-17

    申请号:JP2007322378

    申请日:2007-12-13

    CPC classification number: G11C29/56008 G06F11/1012 G11C5/04 G11C2029/0409

    Abstract: PROBLEM TO BE SOLVED: To provide a method and system for improving maintenability of a memory system. SOLUTION: The method for identifying a faulty memory element in the memory system wherein two or more modules operate in unison in response to a read request, includes a step (S810) of receiving syndrome bits and an address associated with an uncorrectable error (UE). And, the method further includes a step of, in response to a previous correctable error (CE) having occurred, retrieving the location of the CE specifying a memory device position, a step of determining a location of the UE specifying a memory device position by using the location of the CE and the syndrome bits of the UE as input, and a step (S816) of identifying the faulty memory element associated with the location of the UE. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种用于改善存储系统的可维护性的方法和系统。 解决方案:用于识别存储器系统中的错误存储元件的方法,其中两个或更多个模块响应于读取请求而一致地操作,包括接收校正子位和与不可校正错误相关联的地址的步骤(S810) (UE)。 并且,该方法还包括响应于发生的先前可校正错误(CE)的响应,检索指定存储器设备位置的CE的位置的步骤,确定UE指定存储器设备位置的位置的步骤 使用CE的位置和UE的校正子位作为输入,以及识别与UE的位置相关联的故障存储器元件的步骤(S816)。 版权所有(C)2008,JPO&INPIT

    RECLAIMING DISCARDED SOLID STATE DEVICES
    3.
    发明申请
    RECLAIMING DISCARDED SOLID STATE DEVICES 审中-公开
    重新抛弃固定状态装置

    公开(公告)号:WO2013122691A3

    公开(公告)日:2015-06-11

    申请号:PCT/US2013020470

    申请日:2013-01-07

    Applicant: IBM

    CPC classification number: G11C29/56008 G06F11/2289 G06F11/3409 G11C16/349

    Abstract: Discarded memory devices unfit for an original purpose can be reclaimed for reuse for another purpose. The discarded memory devices are tested and evaluated to determine the level of performance degradation therein. A set of an alternate usage and an information encoding scheme to facilitate a reuse of the tested memory device is identified based on the evaluation of the discarded memory device. A memory chip controller may be configured to facilitate usage of reclaimed memory devices by enabling a plurality of encoding schemes therein. Further, a memory device can be configured to facilitate diagnosis of the functionality, and to facilitate usage as a discarded memory unit. Waste due to discarded memory devices can be thereby reduced.

    Abstract translation: 废弃的不适合原始目的的存储设备可以回收再利用用于另一目的。 对废弃的存储器件进行测试和评估,以确定其中性能下降的程度。 基于对废弃的存储器件的评估来识别一组替代使用和信息编码方案,以便于重新使用被测试的存储器件。 存储器芯片控制器可以被配置为通过使能其中的多个编码方案来促进再生存储器件的使用。 此外,存储器装置可以被配置为便于诊断功能,并且便于作为丢弃的存储器单元的使用。 因此可以减少因废弃的存储器件造成的浪费。

    VARIABILITY AWARE WEAR LEVELING
    4.
    发明申请
    VARIABILITY AWARE WEAR LEVELING 审中-公开
    可变性知识磨损水平

    公开(公告)号:WO2013191977A3

    公开(公告)日:2014-02-20

    申请号:PCT/US2013045354

    申请日:2013-06-12

    Applicant: IBM

    Abstract: Techniques are presented that include determining, for data to be written to a nonvolatile memory, a location in the nonvolatile memory to which the data should be written based at least on one or more wear metrics corresponding to the location. The one or more wear metrics are based on measurements of the location. The measurements estimate physical wear of the location. The techniques further include writing the data to the determined location in the nonvolatile memory. The techniques may be performed by methods, apparatus (e.g., a memory controller), and computer program products.

    Abstract translation: 提出了技术,包括至少基于对应于该位置的一个或多个磨损度量,确定要写入非易失性存储器的数据的非易失性存储器中应该写入数据的位置。 一个或多个磨损指标基于位置的测量。 测量值估计位置的物理磨损。 这些技术还包括将数据写入非易失性存储器中的确定位置。 这些技术可以通过方法,装置(例如,存储器控制器)和计算机程序产品来执行。

    Absichern der Inhalte einer Speichereinheit

    公开(公告)号:DE112014000311B4

    公开(公告)日:2021-10-07

    申请号:DE112014000311

    申请日:2014-01-30

    Applicant: IBM

    Abstract: Dynamische Direktzugriffsspeicher- (DRAM-) Einheit (100; 200), aufweisend:ein Matrixfeld (105; 205) auf der DRAM-Einheit zum Speichern von Daten, wobei das Matrixfeld zwei oder mehr Zeilen (110) enthält, wobei jede Zeile zwei oder mehr Speicherzellen aufweist;einen Zeilenversionsspeicher auf der DRAM-Einheit für jede Zeile des Arrays, um einen Zeilenversionswert (112; 212) zu speichern; einen Gruppenversionsdatenspeicher (101; 201) auf der DRAM-Einheit zum Speichern eines Gruppenversionswerts (102; 202);und einen Sicherheitscontroller (220) in der DRAM-Einheit, der konfiguriert ist, auf den Empfang einer Löschanforderung zu antworten, indem der Lesezugriff für alle Zeilen des Matrixfelds der DRAM-Einheit gesperrt wird und der Gruppenversionswert in einen neuen Gruppenversionswert geändert wird, wobei es nicht zulässig ist, einen Gruppenversionswert festzulegen, der im Gruppenversionsdatenspeicher gespeichert ist.

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